Single FETs, MOSFETs AUIRFR48Z product image

AUIRFR48Z

  • Description:MOSFET N-CH 55V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:961be6d88949 Category: Brand:

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AUIRFR48Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 42A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR48Z

  • Description:MOSFET N-CH 55V 42A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:42A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:11mOhm @ 37A, 10V
  • Vgs(th) (Max) @ Id:4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:60 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1720 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):91W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR48Z

AUIRFR48Z

Single FETs, MOSFETs Overview

The AUIRFR48Z is a single N-channel HEXFET power MOSFET designed for automotive applications. It features a D-Pak (TO-252AA) package and supports junction temperatures up to 175°C. Key electrical parameters include a drain-to-source breakdown voltage of 55V, a maximum on-resistance of 11mΩ at VGS=10V, and a continuous drain current of 62A (silicon limited). The device exhibits fast switching characteristics with a total gate charge of 40nC and allows repetitive avalanche operation.

Single FETs, MOSFETs Feature Summary

  • Automotive qualified per AEC-Q101 standards
  • Advanced process technology for low on-resistance
  • Supports repetitive avalanche energy up to Tjmax

Single FETs, MOSFETs Applications

  • Automotive power switching circuits
  • High-efficiency motor control systems
  • General-purpose power management in vehicles

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your manufacturing needs. Standard packaging utilizes tubes containing 75 units, while tape and reel options are available in quantities of 3000. Confirm that the selected form factor aligns with your assembly equipment capabilities before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing for automotive environments requiring robust thermal performance and high reliability. Ensure the application circuit respects the absolute maximum ratings, particularly regarding pulsed drain current and avalanche energy limits. Verify PCB layout requirements for the D-Pak package to maintain optimal thermal dissipation.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, utilizing specialized processing techniques to minimize resistance per silicon area. It is distinct from other variants by its specific qualification for automotive grade reliability and its optimized switching speed for efficient power conversion in demanding vehicle electronics.

Single FETs, MOSFETs Replacement Considerations

Check for updated OptiMOS generations or alternative packages like TO-220 if higher current capacity is needed. Ensure any substitute maintains the same voltage rating and meets automotive qualification standards.

Single FETs, MOSFETs FAQ

Is the AUIRFR48Z suitable for repetitive avalanche applications?

Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature.

What is the maximum operating junction temperature?

The device supports an operating junction temperature range from -55°C to +175°C.

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