AUIRFR5410-IR

Single FETs, MOSFETs Overview

The AUIRFR5410-IR is an automotive-grade N-channel Power MOSFET manufactured by International Rectifier. It utilizes advanced HEXFET process technology to achieve low on-resistance and fast switching speeds. The device features a ruggedized design suitable for surface mount applications using standard soldering techniques. Key electrical parameters include a drain-source voltage of 100 V, a continuous drain current of 28 A, and a maximum on-resistance of 77 mΩ. It operates within a temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Automotive-grade qualification ensuring reliability in demanding environments
• Advanced HEXFET processing for minimized on-resistance per silicon area
• Fast switching characteristics combined with high surge current capability
• Fully avalanche rated for robust performance under transient conditions

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• Motor control circuits
• High-side and low-side load switches
• DC-DC converter topologies

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'IR' confirms the required automotive grade and reel packaging configuration. Ensure the component matches the intended thermal management requirements for the target application. Confirm RoHS compliance status if restricted substances are a constraint. Cross-reference the manufacturer's latest datasheet revision to validate pinout and absolute maximum ratings before integration.

Single FETs, MOSFETs Selection Notes

Select this component when high efficiency and thermal stability are critical for automotive electronics. The 100 V rating provides sufficient headroom for 12 V and 24 V vehicle systems. Consider the package thermal resistance for heat dissipation needs. Verify gate charge specifications against driver capabilities to ensure optimal switching performance without excessive losses.

Single FETs, MOSFETs Part Context

This part belongs to the IRFR series of power MOSFETs from International Rectifier, now part of Infineon Technologies. The series is known for combining low on-resistance with rugged device design. These components are widely used in industrial and automotive sectors where reliability and efficiency are paramount. The HEXFET technology represents a mature generation of power switching solutions.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 100 V, 28 A, and 77 mΩ specifications. Check for equivalent automotive qualification standards such as AEC-Q101. Verify that alternative packages maintain similar thermal and mechanical footprints. Ensure gate threshold voltages are compatible with existing drive circuitry.