AUIRFR5410

Description：MOSFET P-CH 100V 13A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:296d51ebce1c Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFR5410 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET P-CH 100V 13A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFR5410

Description：MOSFET P-CH 100V 13A DPAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：P-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：100 V
Current - Continuous Drain (Id) @ 25°C：13A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：205mOhm @ 7.8A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：58 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：760 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：66W (Tc)
Operating Temperature：-55°C ~ 150°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：TO-252AA (DPAK)
Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRFR5410

AUIRFR5410

Single FETs, MOSFETs Overview

The AUIRFR5410 is a P-Channel HEXFET power MOSFET designed for automotive applications. It features a D-Pak (TO-252AA) surface-mount package and utilizes advanced planar technology to achieve low on-resistance per silicon area. The device supports a continuous drain current of -13A at 25°C case temperature and withstands a drain-to-source voltage of -100V. It operates within a junction temperature range of -55°C to +150°C, with a maximum power dissipation of 66W. The component is fully avalanche rated and qualified to the AEC-Q101 standard.

Single FETs, MOSFETs Feature Summary

Automotive qualification compliant with AEC-Q101 standards
Advanced planar cellular design for optimized on-resistance
Fully avalanche rated with repetitive avalanche capability up to Tjmax
Fast switching speed combined with ruggedized device design

Single FETs, MOSFETs Applications

Automotive power switching circuits
High-efficiency motor control systems
General-purpose power management in demanding environments

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your manufacturing process. The base part number is available in tube packaging, while tape and reel options exist for automated assembly. Confirm that the selected form factor aligns with your board layout and pick-and-place equipment specifications before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-grade P-Channel MOSFET is required. Ensure the application voltage does not exceed the -100V rating and that thermal management can handle the specified power dissipation. Consider the gate threshold voltage characteristics to ensure compatibility with the intended driver logic levels for reliable turn-on performance.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family of power MOSFETs. It represents the integration of industrial-grade robustness with automotive reliability standards. The D-Pak package provides a balance between thermal performance and compact surface-mount footprint suitable for various electronic assemblies.