AUIRFS3107-7P

Single FETs, MOSFETs Overview

The AUIRFS3107-7P is an automotive-grade, single N-channel HEXFET power MOSFET in a D2-Pak 7-pin surface-mount package. It features a 75V drain-source voltage rating and ultra-low on-resistance with a maximum of 2.6mΩ at VGS=10V. The device supports continuous drain currents up to 240A (package-limited) or 260A (silicon-limited) and handles pulsed currents of 1060A. Key electrical parameters include a total gate charge of 160nC typ., a junction-to-case thermal resistance of 0.4°C/W, and operation up to a 175°C junction temperature.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability
• Advanced process technology enabling extremely low on-resistance
• Enhanced dV/dt and dI/dT capability for robust switching performance
• Repetitive avalanche allowed up to the maximum junction temperature

Single FETs, MOSFETs Applications

• Automotive power distribution systems
• High-efficiency synchronous rectification
• Motor control applications requiring fast switching
• Power conversion circuits operating under harsh thermal conditions

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix matches the required packaging format, as the base part number corresponds to tube packaging while tape and reel variants exist. Confirm that the component meets the necessary AEC-Q101 qualification level for your target automotive application. Ensure compatibility with standard D2-Pak 7-pin footprints during PCB layout. Review the absolute maximum ratings carefully to prevent exceeding thermal or current limits during system design.

Single FETs, MOSFETs Selection Notes

Select this component when automotive qualification and high current handling are critical requirements. The D2-Pak 7-pin package offers superior thermal dissipation compared to standard three-terminal packages due to additional source connections. Consider the 175°C operating temperature range for environments with limited cooling. Evaluate the gate charge specifications against driver capabilities to optimize switching losses in high-frequency designs.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's HEXFET family, utilizing advanced processing techniques to minimize on-resistance per silicon area. The 'AU' prefix indicates automotive grade qualification, distinguishing it from industrial versions. The 7-pin configuration enhances current carrying capacity and thermal performance by providing multiple source terminals for improved heat spreading and lower inductance paths.

Single FETs, MOSFETs Replacement Considerations

Direct replacements must match the 75V rating, D2-Pak 7-pin footprint, and automotive qualification. Verify that substitute parts meet or exceed the 2.6mΩ maximum RDS(on) and 240A continuous current limits. Check that the replacement maintains similar gate charge characteristics to ensure compatible drive requirements.

Single FETs, MOSFETs FAQ

Is repetitive avalanche operation permitted for this device?

Yes, the datasheet explicitly states that repetitive avalanche is allowed up to the maximum junction temperature of 175°C.

What is the difference between the silicon-limited and package-limited drain current?

The silicon-limited current is 260A, representing the theoretical limit of the die. The package-limited current is 240A, which accounts for the physical constraints of the bond wires and package leads.

How does the 7-pin package improve performance over a standard 3-pin D2PAK?

The additional source pins provide parallel current paths, reducing overall on-resistance and inductance while improving thermal dissipation capabilities.