AUIRFS3107

$1.77

Description：MOSFET N-CH 75V 195A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:e34265c231be Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFS3107 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 75V 195A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS3107

Description：MOSFET N-CH 75V 195A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：75 V
Current - Continuous Drain (Id) @ 25°C：195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3mOhm @ 140A, 10V
Vgs(th) (Max) @ Id：4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：240 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：9370 pF @ 50 V
FET Feature：-
Power Dissipation (Max)：370W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：D2PAK
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS3107

AUIRFS3107

Single FETs, MOSFETs Overview

The AUIRFS3107 is an automotive-grade N-channel HEXFET power MOSFET with a 75V drain-source voltage rating. It features a maximum on-resistance of 3.0mΩ at VGS=10V and supports continuous drain currents up to 230A (silicon limited) or 195A (package limited). The device operates at junction temperatures up to 175°C, dissipates 370W, and includes repetitive avalanche capability. Key dynamic parameters include a total gate charge of 160nC typ and a peak diode recovery dv/dt of 14V/ns.

Single FETs, MOSFETs Feature Summary

Automotive qualified per AEC-Q101 standards
Enhanced dV/dT and dI/dT robustness
Repetitive avalanche allowed up to Tjmax

Single FETs, MOSFETs Applications

Automotive power switching applications
Synchronous rectification in DC-DC converters
High-efficiency motor control circuits

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required: D2-Pak (TO-263AB) for standard tube or tape-and-reel packaging, or TO-262 for tube packaging. Confirm that the application environment meets the specified -55°C to +175°C operating range. Ensure driver circuits support the 10V gate drive level for optimal RDS(on) performance. Check for RoHS compliance requirements if applicable to the final assembly.

Single FETs, MOSFETs Selection Notes

Select this component when high current handling and low conduction losses are critical in automotive environments. The 75V rating provides margin for 48V systems. Consider the thermal resistance of 0.4 K/W for heatsinking calculations. Evaluate the 160nC gate charge against available gate driver strength to manage switching speeds and EMI.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, utilizing advanced process technology for ultra-low on-resistance. It is designed specifically for automotive applications requiring high reliability and robustness against electrical stress. The 'AU' prefix indicates its qualification for automotive grade standards.

Single FETs, MOSFETs Replacement Considerations

The IRFS3107 serves as the industrial equivalent with identical electrical characteristics but without automotive qualification. Verify package compatibility between D2-Pak variants before substitution.