Single FETs, MOSFETs AUIRFS3206 product image

AUIRFS3206

  • Description:MOSFET N-CH 60V 120A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:6f1e0f310af4 Category: Brand:

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AUIRFS3206 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 120A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS3206

  • Description:MOSFET N-CH 60V 120A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:3mOhm @ 75A, 10V
  • Vgs(th) (Max) @ Id:4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:170 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:6540 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):300W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS3206

AUIRFS3206

Single FETs, MOSFETs Overview

The AUIRFS3206 is an automotive-grade, single N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 60V and a typical on-resistance of 2.4mΩ at VGS=10V, with a maximum rating of 3.0mΩ. The device supports continuous drain currents up to 210A (silicon limited) or 120A (package limited). It operates within a junction temperature range of -55°C to 175°C and includes enhanced ruggedness against dynamic dv/dt and avalanche stress.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification supporting operation up to 175°C junction temperature
  • Advanced process technology achieving ultra-low specific on-resistance
  • Improved gate, avalanche, and dynamic dv/dt ruggedness
  • Fast switching characteristics optimized for high-frequency performance

Single FETs, MOSFETs Applications

  • Automotive power distribution systems
  • High efficiency synchronous rectification in SMPS
  • Hard switched and high frequency circuits
  • Motor control applications requiring robust thermal performance

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix to confirm package type and reel configuration. Confirm RoHS compliance status and halogen-free designation as required by project specifications. Ensure the component meets the necessary automotive quality standards for the intended application environment.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and 175°C thermal operation are mandatory. The low on-resistance minimizes conduction losses, while the enhanced ruggedness protects against transient overvoltages. Consider the package current limits if silicon limitations exceed board thermal dissipation capabilities.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's HEXFET family, utilizing advanced planar trench technology. It is specifically engineered for automotive environments where high thermal stability and electrical ruggedness are critical requirements for long-term system reliability.

Single FETs, MOSFETs Replacement Considerations

Direct replacements include IRFS3206TRRPBF for non-automotive contexts. For automotive equivalents, verify AUIRFS3206TRL variants. Cross-reference with IRFB3206PbF for through-hole alternatives.

AUIRFS3206AUIRFS3206

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