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AUIRFS3607 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is MOSFET N-CH 75V 80A D2PAK. Review the specifications below when checking this part for your BOM.
Single FETs, MOSFETs specifications for AUIRFS3607
- Description：MOSFET N-CH 75V 80A D2PAK
- Series：HEXFET®
- Mfr：International Rectifier
- Package：Bulk
- FET Type：N-Channel
- Technology：MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss)：75 V
- Current - Continuous Drain (Id) @ 25°C：80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)：10V
- Rds On (Max) @ Id, Vgs：9mOhm @ 46A, 10V
- Vgs(th) (Max) @ Id：4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs：84 nC @ 10 V
- Vgs (Max)：±20V
- Input Capacitance (Ciss) (Max) @ Vds：3070 pF @ 50 V
- FET Feature：-
- Power Dissipation (Max)：140W (Tc)
- Operating Temperature：-55°C ~ 175°C (TJ)
- Grade：Automotive
- Qualification：AEC-Q101
- Mounting Type：Surface Mount
- Supplier Device Package：PG-TO263-3
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Single FETs, MOSFETs datasheet and documents for AUIRFS3607
Single FETs, MOSFETs Overview
The AUIRFS3607 is an automotive-grade, single N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a maximum drain-source voltage of 75V and a continuous drain current of 80A at 25°C case temperature. The device exhibits a typical on-resistance of 7.34mΩ and a total gate charge of 56nC. It supports a junction temperature range from -55°C to +175°C and includes repetitive avalanche capability.
Single FETs, MOSFETs Feature Summary
- Automotive qualified per AEC-Q101 standards
- Enhanced repetitive avalanche rating
- Fast switching speed with low gate charge
- 175°C operating junction temperature
Single FETs, MOSFETs Applications
- Automotive power distribution systems
- High-efficiency synchronous rectification
- Motor control circuits
- DC-DC converter topologies
Single FETs, MOSFETs Procurement Notes
Verify the specific package variant (D2-Pak or TO-262) and ordering suffix (Tube or Tape & Reel) against project requirements. Confirm that the component meets the required AEC-Q101 qualification level for the target automotive application. Ensure thermal management design accounts for the specified junction-to-case thermal resistance.
Single FETs, MOSFETs Selection Notes
Select this component when an automotive-qualified N-channel MOSFET with 75V breakdown is required. It is suitable for designs prioritizing low conduction losses and fast switching dynamics. Consider the 175°C thermal limit for high-temperature environments. Evaluate the body diode reverse recovery characteristics if used in synchronous rectification configurations.
Single FETs, MOSFETs Part Context
This part belongs to the Infineon HEXFET family, utilizing advanced process technology to minimize on-resistance per silicon area. It is manufactured by Infineon Technologies, formerly International Rectifier. The device integrates a built-in body diode and is available in surface-mount packages optimized for thermal performance.
Single FETs, MOSFETs Replacement Considerations
The base number IRFS3607 shares identical electrical specifications but lacks automotive qualification. Verify that the non-automotive version meets all reliability requirements for the intended application before substitution.
Explore related parts through FETs, MOSFETs, Transistors, Discrete Semiconductor Products, all product categories.
