Single FETs, MOSFETs AUIRFS3806 product image

AUIRFS3806

$0.97
  • Description:MOSFET N-CH 60V 43A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk,Tube

SKU:3d380ad2f78d Category: Brand:

  
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AUIRFS3806 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 60V 43A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS3806

  • Description:MOSFET N-CH 60V 43A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk,Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:43A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:15.8mOhm @ 25A, 10V
  • Vgs(th) (Max) @ Id:4V @ 50µA
  • Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:1150 pF @ 50 V
  • FET Feature:-
  • Power Dissipation (Max):71W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:PG-TO263-3
  • Package / Case:TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS3806

AUIRFS3806

Single FETs, MOSFETs Overview

The AUIRFS3806 is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a 60V drain-source voltage rating and a continuous drain current of 43A at 25°C, with a maximum on-resistance of 15.8mΩ. The device operates within a junction temperature range of -55°C to +175°C and utilizes a D2PAK (TO-263) surface-mount package. Designed for high reliability, it includes enhanced gate ruggedness and dynamic dv/dt capabilities suitable for demanding automotive environments.

Single FETs, MOSFETs Feature Summary

  • Automotive-grade qualification ensuring high reliability in vehicle applications
  • Enhanced gate, avalanche, and dynamic dv/dt ruggedness
  • Fully characterized capacitance and avalanche safe operating area
  • Improved body diode dv/dt and di/dt capability

Single FETs, MOSFETs Applications

  • High efficiency synchronous rectification in switching mode power supplies
  • Uninterruptible power supply systems
  • High speed power switching circuits
  • Hard switched and high frequency power conversion applications

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and marking code against the official Infineon datasheet to confirm automotive grade status and RoHS compliance. Ensure the ordering part number matches the required tape and reel or tube packaging format. Confirm that the component meets the specific AEC-Q101 requirements for your target application before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring robust performance under high thermal stress up to 175°C. Consider its low on-resistance for minimizing conduction losses in high-current paths. Evaluate the package thermal resistance for adequate heat dissipation in your PCB layout. Verify compatibility with standard gate drive voltages and ensure the avalanche energy ratings meet system transient requirements.

Single FETs, MOSFETs Part Context

This part belongs to the Infineon HEXFET family of power MOSFETs, specifically tailored for automotive electronics. It represents a mature technology optimized for durability and electrical performance in harsh environments. The device integrates advanced silicon processes to deliver superior switching characteristics compared to standard industrial counterparts.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same voltage and current class. Verify that any substitute maintains equivalent thermal resistance and avalanche ratings. Ensure the replacement component holds necessary automotive certifications if used in safety-critical systems.

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