AUIRFS8403TRL

$1.33

Description：AUIRFS8403 - 20V-40V N-CHANNEL A
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk

SKU:255c044fd9e2 Category: Single FETs, MOSFETs Brand: International Rectifier

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Product introduction

AUIRFS8403TRL is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists International Rectifier. Its product description is AUIRFS8403 - 20V-40V N-CHANNEL A. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS8403TRL

Description：AUIRFS8403 - 20V-40V N-CHANNEL A
Series：HEXFET®
Mfr：International Rectifier
Package：Bulk
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：123A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：3.3mOhm @ 70A, 10V
Vgs(th) (Max) @ Id：3.9V @ 100µA
Gate Charge (Qg) (Max) @ Vgs：93 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：3183 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：99W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS8403TRL

AUIRFS8403TRL

Single FETs, MOSFETs Overview

The AUIRFS8403TRL is an automotive-grade N-channel HEXFET power MOSFET manufactured by International Rectifier. It features a 40V drain-source breakdown voltage and a maximum on-resistance of 3.3mΩ at VGS=10V. The device supports a continuous drain current of 123A (silicon limited) at TC=25°C and handles a pulsed drain current of 492A. It operates within a junction temperature range of -55°C to +175°C, with a maximum power dissipation of 99W at TC=25°C. The component utilizes a D2PAK (TO-263) surface-mount package.

Single FETs, MOSFETs Feature Summary

Advanced process technology enabling ultra-low on-resistance per silicon area for high efficiency.
Designed specifically for automotive applications with ruggedized device reliability.
Capable of repetitive avalanche operation up to the maximum junction temperature.
Fast switching characteristics combined with a 175°C operating temperature rating.

Single FETs, MOSFETs Applications

Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid Systems
Heavy Loads
DC-DC Converter

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix 'TRL' corresponds to the Tape and Reel Left configuration with a standard pack quantity of 800 units. Confirm the package type matches the required D2PAK footprint. Ensure the component meets the specific automotive qualification standards required for your application environment.

Single FETs, MOSFETs Selection Notes

Select this component when a 40V N-channel MOSFET with low conduction losses is required for automotive systems. Consider the 123A continuous current capability and 175°C thermal rating for high-power density designs. Evaluate the gate charge parameters against your driver capabilities to ensure optimal switching performance in EPS or DC-DC converter topologies.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from International Rectifier, now part of Infineon Technologies. The 'AU' prefix indicates it is designated for the automotive market, adhering to specific industry requirements for product discontinuance and process change notifications. It represents a specialized variant optimized for harsh automotive environments compared to standard industrial counterparts.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes are not explicitly confirmed in the provided documentation. When evaluating alternatives, verify that any replacement maintains the same 40V rating, comparable RDS(on), and D2PAK package dimensions. Ensure the substitute also holds relevant automotive qualifications if used in safety-critical systems.