AUIRFS8408-7TRR

Single FETs, MOSFETs Overview

The AUIRFS8408-7TRR is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It utilizes the latest process technology to achieve exceptionally low on-resistance per silicon area, supporting a maximum drain-source voltage of 40 V and a typical RDS(on) of 0.7 mΩ at 10 V gate drive. The device features a D2Pak (TO-263-7) package with a junction-to-case thermal resistance of 0.51 °C/W. It supports continuous drain currents up to 240 A (package limited) and 397 A (silicon limited), with a maximum power dissipation of 294 W. The component operates within a temperature range of -55 °C to +175 °C and is qualified under AEC-Q101 standards.

Single FETs, MOSFETs Feature Summary

• Advanced process technology enabling ultra-low specific on-resistance for high efficiency
• Automotive qualification compliant with AEC-Q101 standards for reliability
• Enhanced dv/dt and di/dt capabilities for robust switching performance
• Repetitive avalanche rated allowing operation up to maximum junction temperature

Single FETs, MOSFETs Applications

• Electric Power Steering (EPS)
• Battery Switch circuits
• Start/Stop Micro Hybrid systems
• Heavy Loads management
• SMPs (Switching Mode Power supplies)

Single FETs, MOSFETs Procurement Notes

Verify that the ordering suffix matches the required tape and reel configuration, as standard pack forms vary between tube and reel options. Confirm the specific revision level against the manufacturer's datasheet to ensure compatibility with current automotive quality requirements. Cross-reference the part number with official distributor catalogs to validate authenticity and traceability before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring high current handling in a compact surface-mount package. Ensure the PCB layout accommodates the D2Pak-7 pin footprint and provides adequate copper area for thermal dissipation. Verify that the gate drive voltage meets the 10 V requirement for optimal RDS(on) performance. Consider the thermal impedance characteristics when calculating heat sinking needs for continuous operation near maximum ratings.

Single FETs, MOSFETs Part Context

This part belongs to Infineon's automotive HEXFET portfolio, designed specifically for demanding vehicle environments. It represents a generation of power MOSFETs optimized for low loss and high reliability. The D2Pak-7 package offers improved thermal performance compared to standard TO-263 variants, making it suitable for applications where space constraints and heat management are critical design factors.

Single FETs, MOSFETs Replacement Considerations

AUIRFS8408-7TRL is a verified substitute offering identical electrical specifications but packaged in Tape and Reel Left format instead of Right.