Single FETs, MOSFETs AUIRFSL8409 product image

AUIRFSL8409

  • Description:MOSFET N-CH 40V 195A TO262
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:bc8878a8c055 Category: Brand:

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AUIRFSL8409 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 195A TO262. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFSL8409

  • Description:MOSFET N-CH 40V 195A TO262
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:1.2mOhm @ 100A, 10V
  • Vgs(th) (Max) @ Id:3.9V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:450 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:14240 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):375W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-262
  • Package / Case:TO-262-3 Short Leads, I2PAK

Single FETs, MOSFETs datasheet and documents for AUIRFSL8409

AUIRFSL8409

Single FETs, MOSFETs Overview

The AUIRFSL8409 is an automotive-grade N-channel HEXFET power MOSFET designed for high-efficiency switching applications. It features a TO-262 (D2-Pak) surface-mount package and supports junction temperatures up to 175°C. The device provides a drain-to-source breakdown voltage of 40V, with a maximum continuous drain current of 195A limited by the package. Key electrical parameters include a typical on-resistance of 0.97mΩ and a maximum of 1.2mΩ at VGS=10V. Total gate charge is typically 300nC, enabling fast switching speeds suitable for demanding power electronics environments.

Single FETs, MOSFETs Feature Summary

  • Advanced process technology achieving ultra-low on-resistance per silicon area
  • Designed for repetitive avalanche operation up to maximum junction temperature
  • Fast switching characteristics combined with enhanced dv/dt and di/dt capabilities

Single FETs, MOSFETs Applications

  • Electric Power Steering (EPS)
  • Battery Switch
  • Start/Stop Micro Hybrid Systems
  • Heavy Loads
  • DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized Infineon distributors or certified partners. Confirm that the specific orderable part number matches the required package variant, as the AUIRFSL8409 designation specifically corresponds to the TO-262 form factor. Ensure compliance with RoHS standards and check for any specific automotive qualification documentation required for your integration environment.

Single FETs, MOSFETs Selection Notes

Select this component when a robust N-channel MOSFET with low conduction losses is required for 40V automotive systems. The TO-262 package offers a balance between thermal performance and mounting flexibility compared to smaller surface-mount options. Consider the 195A package-limited current rating against your peak load requirements and ensure adequate heatsinking to maintain junction temperatures within the specified 175°C operational limit.

Single FETs, MOSFETs Part Context

This device belongs to the AUIRFS/SL8409 family of automotive power MOSFETs manufactured by Infineon Technologies. It utilizes HEXFET technology, originally developed by International Rectifier, which has been integrated into Infineon's portfolio. The 'AU' prefix indicates adherence to automotive industry standards for product discontinuance and process change notifications, ensuring long-term availability for vehicle manufacturing cycles.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same family include AUIRFS8409 (D2-Pak) and AUIRFB8409 (TO-220). Verify pinout compatibility and thermal resistance differences when transitioning between these package types. Cross-referencing with newer generations may require re-evaluation of gate charge and switching speed parameters.

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