AUIRL3705ZL

Single FETs, MOSFETs Overview

The AUIRL3705ZL is an N-channel enhancement mode MOSFET from the HEXFET series, manufactured by Infineon Technologies. It features a maximum drain-source voltage of 55 V and a continuous drain current of 89 A at case temperature. The device utilizes a DPAK (TO-252) surface-mount package with three pins. Key electrical parameters include a maximum on-resistance of 12 mΩ, a gate threshold voltage range of 1 V to 3 V, and a typical gate charge of 44 nC at 5 V. It supports a maximum power dissipation of 130 W and operates within a junction temperature range of -55 °C to +175 °C.

Single FETs, MOSFETs Feature Summary

• Logic-level compatible gate drive characteristics enabling efficient control
• Low on-resistance design for high efficiency in power switching applications
• Robust thermal performance supporting high power dissipation capabilities

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'ZL' against official Infineon documentation to confirm package type and availability status. Ensure compatibility with required RoHS directives if applicable, as some variants may differ. Cross-reference the manufacturer part number with authorized distributors to validate authenticity and supply chain integrity before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring low voltage operation with high current handling capabilities. Consider the DPAK package constraints for thermal management and PCB layout. Evaluate the gate charge requirements against the driving circuit's capability to ensure adequate switching speed without excessive drive current demands.

Single FETs, MOSFETs Part Context

This component belongs to the HEXFET family of power MOSFETs, known for optimized performance in power conversion. Manufactured by Infineon Technologies, it represents a continuation of International Rectifier's legacy in power semiconductor solutions. The device is designed for robust performance in demanding electronic environments.

Single FETs, MOSFETs Replacement Considerations

Consult official datasheets for direct substitutes such as IRL3705Z or IRL3705ZSTRL. Verify pinout compatibility and electrical parameter equivalence before substitution. Ensure that any replacement meets the same thermal and voltage specifications required by the original design.