AUIRL7766M2TR

Single FETs, MOSFETs Overview

The AUIRL7766M2TR is a single N-channel automotive-grade power MOSFET manufactured by Infineon Technologies. It utilizes HEXFET technology and is housed in a DirectFET-M4 surface-mount package. Key electrical parameters include a drain-source breakdown voltage of 100 V, a continuous drain current of 51 A, and a maximum on-resistance of 8 mOhms. The device supports gate-source voltages up to ±16 V with a threshold voltage of 2.5 V and a total gate charge of 44 nC. It operates within a temperature range of -55°C to +175°C, dissipates 62.5 W, and meets AEC-Q100 qualification standards.

Single FETs, MOSFETs Feature Summary

• Automotive Grade 1 qualification compliant with AEC-Q100 standards for reliability.
• DirectFET-M4 package design optimized for low thermal resistance and efficient heat dissipation.
• HEXFET planar technology providing low on-resistance per silicon area.

Single FETs, MOSFETs Applications

• Automotive DC-DC converter circuits
• High-side or low-side switching applications in vehicle power systems
• General automotive power management modules

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation as Infineon Technologies, noting the historical acquisition of International Rectifier. Confirm the component status is End-of-Life or discontinued if sourcing from legacy distributors. Ensure the DirectFET-M4 package footprint matches the target PCB layout requirements before procurement.

Single FETs, MOSFETs Selection Notes

Select this component for applications requiring a 100V rating with moderate current handling capabilities around 51A. The low gate charge facilitates faster switching speeds suitable for high-frequency converters. Verify that the thermal management solution can handle the specified power dissipation within the operating temperature limits.

Single FETs, MOSFETs Part Context

This part belongs to the AUIR series of automotive-qualified MOSFETs designed for rugged environments. The DirectFET packaging family integrates the die directly onto the substrate to minimize parasitic inductance and improve thermal performance compared to traditional leaded packages.

Single FETs, MOSFETs Replacement Considerations

Check for direct pin-compatible alternatives within the same DirectFET-M4 form factor. Consider other 100V N-channel HEXFET devices with similar Rds(on) and current ratings if exact substitution is unavailable.