AUIRLL024NTR-IR

Single FETs, MOSFETs Overview

The AUIRLL024NTR-IR is an automotive-grade N-channel HEXFET power MOSFET manufactured by International Rectifier. It features a 55V drain-source breakdown voltage and a maximum on-resistance of 65 milliohms at a gate drive of 10 volts. The device supports a continuous drain current of 3.1 amperes and operates with a threshold voltage of 1.8 volts. It utilizes a SOT-223 surface-mount package, ensuring compatibility with standard automated assembly processes while providing ruggedized performance for demanding environments.

Single FETs, MOSFETs Feature Summary

• Automotive qualified to AEC-Q101 standards for enhanced reliability
• Advanced planar technology achieves low on-resistance per silicon area
• Fast switching speed combined with fully avalanche rated ruggedness

Single FETs, MOSFETs Applications

• Automotive load switching applications
• High-side and low-side power control circuits
• General purpose power management in vehicle electronics

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix configuration against the manufacturer's official datasheet to confirm pinout and electrical tolerances. Ensure the component meets the required automotive qualification standards for your specific application environment. Cross-reference the ordering part number with the latest Infineon or International Rectifier documentation to avoid discrepancies in package type or lead-free compliance status.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-rated N-channel MOSFET with low on-resistance is required for 55V systems. The SOT-223 package offers a balance between thermal performance and board space efficiency. Consider the 3.1A continuous current rating and 65mOhm resistance for efficient power handling in compact automotive designs where high reliability and fast switching are critical.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of power MOSFETs from International Rectifier, now part of Infineon Technologies. The HEXFET line is known for utilizing advanced processing techniques to minimize on-resistance while maintaining robust switching characteristics. This specific model targets the automotive sector, leveraging cellular design principles to deliver high efficiency and durability under varying thermal conditions.

Single FETs, MOSFETs Replacement Considerations

Check for direct equivalents such as the IRLZ44N series for higher current needs or the IRLL024N for similar specifications in non-automotive contexts. Verify that any substitute maintains the SOT-223 package footprint and meets the same voltage and current ratings.