Single FETs, MOSFETs AUIRLR024N product image

AUIRLR024N

  • Description:MOSFET N-CH 55V 17A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:4da4d4f870d5 Category: Brand:

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AUIRLR024N is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 17A DPAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLR024N

  • Description:MOSFET N-CH 55V 17A DPAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:17A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4V, 10V
  • Rds On (Max) @ Id, Vgs:65mOhm @ 10A, 10V
  • Vgs(th) (Max) @ Id:2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:15 nC @ 5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:480 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):45W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Surface Mount
  • Supplier Device Package:TO-252AA (DPAK)
  • Package / Case:TO-252-3, DPAK (2 Leads + Tab), SC-63

Single FETs, MOSFETs datasheet and documents for AUIRLR024N

AUIRLR024N

Single FETs, MOSFETs Overview

The AUIRLR024N is an automotive-grade, single N-channel power MOSFET from Infineon Technologies. It features a 55V drain-source voltage rating and a continuous drain current of 17A at 25°C. The device utilizes OptiMOS technology to achieve low on-resistance, specified as 65mΩ at 10V gate drive and 110mΩ at 4.5V. Key electrical parameters include a maximum power dissipation of 45W, a junction temperature range up to 175°C, and a typical total gate charge of 15nC at 5V. It is housed in a DPAK (TO-252) surface-mount package.

Single FETs, MOSFETs Feature Summary

  • Automotive qualification compliant with AEC-Q100 standards for high reliability
  • OptiMOS technology enables low conduction losses and efficient switching performance
  • Logic-level gate drive capability supports direct control by microcontrollers or drivers

Single FETs, MOSFETs Applications

  • Automotive engine management systems
  • Body electronics and lighting control modules
  • General purpose load switching in vehicle networks

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and tape-and-reel quantity requirements against the official Infineon ordering guide. Confirm that the component meets the required AEC-Q100 qualification level for your specific automotive application environment. Ensure compatibility with your PCB footprint for the DPAK package before finalizing procurement.

Single FETs, MOSFETs Selection Notes

Select this component when an automotive-rated N-channel MOSFET with a 55V breakdown voltage is required. It is suitable for applications demanding high current handling up to 17A with low thermal resistance. Consider the logic-level gate threshold if interfacing directly with 3.3V or 5V control signals without additional driver stages.

Single FETs, MOSFETs Part Context

This part belongs to the IRLR series of automotive power MOSFETs. It shares the same die and electrical characteristics as the commercial grade IRLR024N but includes enhanced testing and documentation to meet automotive industry reliability standards. The primary distinction lies in the qualification certification rather than fundamental electrical performance differences.

Single FETs, MOSFETs Replacement Considerations

The commercial equivalent IRLR024N offers identical electrical specifications but lacks automotive qualification. For direct pin-compatible replacements, verify datasheet alignment for Rds(on) and Qg values. No other specific substitute part numbers are confirmed in public documentation.

AUIRLR024NAUIRLR024N

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