Single FETs, MOSFETs AUIRLU3114Z product image

AUIRLU3114Z

$1.19
  • Description:AUIRLU3114Z - 20V-40V N-CHANNEL
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk

SKU:eb279750f38e Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

AUIRLU3114Z is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is AUIRLU3114Z - 20V-40V N-CHANNEL. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRLU3114Z

  • Description:AUIRLU3114Z - 20V-40V N-CHANNEL
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):40 V
  • Current - Continuous Drain (Id) @ 25°C:130A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
  • Rds On (Max) @ Id, Vgs:4.9mOhm @ 42A, 10V
  • Vgs(th) (Max) @ Id:2.5V @ 100µA
  • Gate Charge (Qg) (Max) @ Vgs:56 nC @ 4.5 V
  • Vgs (Max):±16V
  • Input Capacitance (Ciss) (Max) @ Vds:3810 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):140W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:Automotive
  • Qualification:AEC-Q101
  • Mounting Type:Through Hole
  • Supplier Device Package:PG-TO251-3
  • Package / Case:TO-251-3 Short Leads, IPAK, TO-251AA

Single FETs, MOSFETs datasheet and documents for AUIRLU3114Z

AUIRLU3114Z

Single FETs, MOSFETs Overview

The AUIRLU3114Z is an automotive-grade N-channel HEXFET power MOSFET manufactured by Infineon Technologies. It features a maximum drain-to-source voltage of 40 V and a continuous drain current of 130 A at case temperature. The device exhibits a maximum on-resistance of 4.5 mΩ, achieved through advanced silicon technology for low unit area resistance. It operates within a junction temperature range of -55°C to +175°C and holds AEC-Q101 qualification. The component utilizes a PG-TO251-3 package.

Single FETs, MOSFETs Feature Summary

  • Designed specifically for demanding automotive applications with high reliability standards
  • Utilizes advanced process technology to achieve exceptionally low on-resistance per unit silicon area
  • Qualified under the AEC-Q101 standard for automotive electronic components
  • Capable of operating at elevated junction temperatures up to 175°C

Single FETs, MOSFETs Applications

  • Automotive power management systems
  • High-current switching circuits in vehicle electronics
  • Motor control applications requiring robust thermal performance

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix and packaging configuration against official Infineon documentation before procurement. Confirm that the AEC-Q101 qualification status aligns with your project's automotive reliability requirements. Ensure thermal management solutions accommodate the specified power dissipation and junction temperature limits. Cross-reference the exact part number to distinguish between similar variants in the IRL series.

Single FETs, MOSFETs Selection Notes

Select this component when designing automotive circuits requiring a 40 V N-channel MOSFET with high current handling capabilities. The low on-resistance makes it suitable for efficiency-critical power stages. Consider the PG-TO251-3 package constraints for PCB layout and thermal design. Ensure the gate drive voltage is compatible with the enhancement-mode operation characteristics defined in the datasheet.

Single FETs, MOSFETs Part Context

This device belongs to Infineon's automotive HEXFET family, which integrates high-performance MOSFET technology with strict automotive quality standards. The AUIRLU3114Z represents a solution optimized for high-current applications where low conduction losses and high thermal stability are critical. It complements other automotive-grade power semiconductors in complex vehicle electrical architectures.

Single FETs, MOSFETs Replacement Considerations

Consult official Infineon substitution guides for verified alternatives. Ensure any replacement maintains AEC-Q101 qualification and matches the 40 V, 130 A specifications. Verify pin compatibility and thermal performance equivalence before implementation.

AUIRLU3114ZAUIRLU3114Z
$1.19
Buy Now

Recent News