AUIRLZ24NS

Single FETs, MOSFETs Overview

The AUIRLZ24NS is an automotive-grade N-channel HEXFET power MOSFET manufactured by International Rectifier. It features a drain-source voltage rating of 55V and a maximum on-resistance of 0.06 ohms. The device supports a continuous drain current of 18A and operates at junction temperatures up to 175°C. Key electrical characteristics include logic level gate drive compatibility, fast switching capabilities, and repetitive avalanche energy ratings permitted up to the maximum junction temperature.

Single FETs, MOSFETs Feature Summary

• Automotive qualified with advanced process technology for low on-resistance
• Logic level gate drive capability for efficient control
• Fast switching performance with high dv/dt and di/dt tolerance
• Repetitive avalanche rated up to maximum junction temperature

Single FETs, MOSFETs Applications

• Automotive power management systems
• High-efficiency DC-DC converters
• Motor control applications requiring robust switching

Single FETs, MOSFETs Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and specific automotive qualification standards required for your application environment. Ensure ordering suffixes match the exact package type and tape/reel specifications needed for assembly processes.

Single FETs, MOSFETs Selection Notes

Select this component when automotive reliability and high thermal stability are critical. The 55V rating suits low-voltage automotive systems. Logic level drive simplifies interface design with standard microcontrollers. Evaluate thermal management requirements given the 175°C operating limit and ensure PCB layout supports the TO-262 package dissipation needs.

Single FETs, MOSFETs Part Context

This part belongs to the IRLZ24N family of power MOSFETs from International Rectifier, now part of Infineon Technologies. The 'AU' prefix denotes automotive grade qualification, distinguishing it from standard industrial variants like the IRLIZ24N. It utilizes HEXFET technology for optimized silicon efficiency.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes include the AUIRLZ24NL variant which shares identical electrical specifications but differs in packaging format. Standard non-automotive equivalents such as the IRLZ24N may function electrically but lack the required automotive reliability certifications.