Single FETs, MOSFETs AUXAKF1405ZS-7P product image

AUXAKF1405ZS-7P

  • Description:MOSFET N-CH 55V 120A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube

SKU:7678d9d5166b Category: Brand:

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AUXAKF1405ZS-7P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 55V 120A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUXAKF1405ZS-7P

  • Description:MOSFET N-CH 55V 120A D2PAK
  • Series:HEXFET®
  • Mfr:Infineon Technologies
  • Package:Tube
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):55 V
  • Current - Continuous Drain (Id) @ 25°C:120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:4.9mOhm @ 88A, 10V
  • Vgs(th) (Max) @ Id:4V @ 150µA
  • Gate Charge (Qg) (Max) @ Vgs:230 nC @ 10 V
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:5360 pF @ 25 V
  • FET Feature:-
  • Power Dissipation (Max):230W (Tc)
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:D2PAK (7-Lead)
  • Package / Case:TO-263-7, D2PAK (6 Leads + Tab), TO-263CB

Single FETs, MOSFETs datasheet and documents for AUXAKF1405ZS-7P

AUXAKF1405ZS-7P

Single FETs, MOSFETs Overview

The AUXAKF1405ZS-7P is an N-channel power MOSFET from Infineon Technologies, utilizing HEXFET technology. It features a drain-source voltage (V_DS) of 55 V and a continuous drain current (I_D) of 120 A at case temperature of 25°C. The device exhibits a maximum on-resistance (R_DS(on)) of 4.9 mΩ at 10 V gate drive. Packaged in a D2PAK-7 (TO-263) surface-mount housing, it supports a total power dissipation of 230 W under specified thermal conditions.

Single FETs, MOSFETs Feature Summary

  • Utilizes advanced HEXFET processing techniques to achieve extremely low on-resistance per unit area.

Single FETs, MOSFETs Applications

  • Automotive applications

Single FETs, MOSFETs Procurement Notes

Verify the manufacturing status as sources indicate this product may be no longer manufactured. Confirm RoHS compliance and moisture sensitivity level prior to integration. Ensure the supplier provides official documentation for the specific suffix variant to guarantee electrical characteristics match the datasheet specifications.

Single FETs, MOSFETs Selection Notes

Select this component for high-current switching applications requiring low conduction losses within a 55 V system. The D2PAK-7 package offers robust thermal performance for surface-mount designs. Consider the 120 A current rating and 4.9 mΩ resistance when designing heat sinks for sustained operation.

Single FETs, MOSFETs Part Context

This part belongs to the IRF1405 family of N-channel MOSFETs produced by Infineon Technologies (formerly International Rectifier). While the standard IRF1405 uses a TO-220 through-hole package, the AUXAKF1405ZS-7P variant utilizes a D2PAK-7 surface-mount package. Both share similar electrical parameters optimized for automotive and industrial power management.

Single FETs, MOSFETs Replacement Considerations

The IRF1405ZS-7P is a direct package-compatible alternative within the same series. Verify that the substitute maintains the required 55 V rating and D2PAK-7 footprint for seamless board replacement.

AUXAKF1405ZS-7PAUXAKF1405ZS-7P

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