AUXFN8403TR

Single FETs, MOSFETs Overview

The AUXFN8403 is an automotive-grade N-Channel HEXFET power MOSFET in a PQFN 5x6 mm package. It features a 40V drain-source breakdown voltage and a maximum on-resistance of 3.3mΩ at VGS=10V. The device supports continuous drain currents up to 95A (package limited) or 122A (silicon limited). It operates within a junction temperature range of -55°C to +175°C, includes repetitive avalanche capability, and meets AEC-Q101 qualification standards.

Single FETs, MOSFETs Feature Summary

• Automotive qualified per AEC-Q101 standards for high reliability
• Advanced process technology enabling ultra-low on-resistance
• Capable of operating at junction temperatures up to 175°C
• Supports repetitive avalanche energy without failure

Single FETs, MOSFETs Applications

• Electric Power Steering (EPS)
• Battery Switch
• Start/Stop Micro Hybrid systems
• Heavy Loads
• DC-DC Converter

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix required for your packaging needs. Standard availability includes Tape and Reel options with quantities of 4000 units (AUXFN8403TR) or 400 units (AUXFN8403TR2). Confirm that the component matches the PQFN 5x6mm outline dimensions and ensure compliance with RoHS directives before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring low conduction losses in a compact surface-mount form factor. The 40V rating suits low-voltage automotive power distribution. Consider the thermal resistance characteristics and the package-limited current derating curve when sizing heatsinks or PCB copper areas for sustained high-current operations.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family from International Rectifier, now Infineon Technologies. It utilizes advanced processing techniques to minimize silicon area while maintaining robust electrical performance. The 'AU' prefix indicates adherence to automotive industry requirements regarding product discontinuance and process change notifications.

Single FETs, MOSFETs Replacement Considerations

Cross-reference with other 40V N-Channel MOSFETs in PQFN packages if supply constraints exist. Ensure replacement parts match the 3.3mΩ maximum RDS(on), 95A continuous current limit, and AEC-Q101 qualification status to maintain system integrity.

Single FETs, MOSFETs FAQ

What is the maximum allowable gate-to-source voltage?

The absolute maximum rating for Gate-to-Source Voltage is ±20 V.

Is repetitive avalanche operation permitted?

Yes, the device allows repetitive avalanche operation up to the maximum junction temperature (Tjmax).

How is the continuous drain current limited?

The continuous drain current is limited to 95A by the source bond technology (package limitation), although the silicon itself can support up to 122A.