BA782-HE3-18

RF Diode Overview

The BA782-HE3-18 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors in the SOD-123 surface-mount package. It is designed for electric bandswitching in radio and TV tuners operating within the 50 to 1000 MHz frequency range. The device features AEC-Q101 qualification, RoHS compliance, and halogen-free construction. Key electrical parameters include a maximum reverse voltage of 35 V, a forward continuous current rating of 100 mA, and a junction temperature limit of 125 °C. At 100 mA forward current, the typical forward voltage is 1000 mV, while the reverse current remains at or below 50 nA when tested at 20 V.

RF Diode Feature Summary

• Engineered for high-frequency bandswitching applications in radio and television tuner circuits
• Maintains constant and minimal dynamic forward resistance across wide ranges of frequency and forward current
• Exhibits low reverse capacitance that remains largely independent of applied reverse voltage
• Constructed with silicon epitaxial planar technology for reliable performance

RF Diode Applications

• Electric bandswitching in FM radio tuners
• Bandswitching in AM/FM television tuners
• High-frequency signal routing in communication equipment

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering code matches the required tape and reel packaging configuration. Ensure all technical specifications align with the target application requirements before finalizing procurement orders.

RF Diode Selection Notes

Select this component for designs requiring fast switching speeds and low parasitic capacitance in the VHF/UHF spectrum. Verify that the 35 V reverse voltage rating accommodates peak circuit voltages. Consider the SOD-123 footprint constraints during PCB layout planning to ensure proper thermal dissipation and mechanical stability.

RF Diode Part Context

This part belongs to the BA78x series of band switching diodes from Vishay Semiconductors. The HE3 suffix indicates an advanced plastic package utilizing lead-free solder dip and matte tin plating, ensuring compliance with automotive reliability standards and environmental directives.

RF Diode Replacement Considerations

BA783-HE3-18 offers similar characteristics but exhibits slightly higher dynamic forward resistance values. Verify compatibility based on specific impedance requirements within the target RF circuit design.