BA783-G3-18

RF Diode Overview

The BA783-G3-18 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors in the SOD-123 surface-mount package. Designed for radio and TV tuners, it operates within the 50 to 1000 MHz frequency range. Key electrical specifications include a maximum reverse voltage of 35 V and a continuous forward current rating of 100 mA. At a forward current of 10 mA across the operating frequency, the dynamic forward resistance is typically 0.9 Ω. The device exhibits a low diode capacitance of 1.2 pF at 1 MHz with 3 V reverse bias and maintains a junction temperature limit of 125 °C.

RF Diode Feature Summary

• Engineered for electric bandswitching applications in radio and television tuners
• Maintains constant and minimal dynamic forward resistance over wide frequency ranges
• Features small reverse capacitance largely independent of reverse voltage

RF Diode Applications

• Radio tuner circuits
• Television tuner circuits
• Band switching networks in the 50 to 1000 MHz range

RF Diode Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status and material categorization details against official documentation prior to integration. Ensure storage conditions remain within specified limits to maintain reliability. Validate all operational parameters for specific circuit requirements before final implementation.

RF Diode Selection Notes

Select this component when low dynamic forward resistance and stable capacitance are required for high-frequency band switching. Compare against the BA782-G variant if lower dynamic resistance values are necessary for specific current levels. Verify that the 35 V reverse voltage rating meets the peak inverse voltage requirements of the target application environment.

RF Diode Part Context

This part belongs to the BA782/BA783 series of silicon epitaxial planar diodes designed specifically for RF band switching. It shares the same mechanical SOD-123 footprint as the BA782-G but offers distinct electrical characteristics regarding dynamic forward resistance. The series is optimized for consistent performance across varying forward currents and frequencies.

RF Diode Replacement Considerations

The BA782-G serves as a functional alternative within the same series. Substitution requires verification that the lower dynamic forward resistance of the BA782-G aligns with the design constraints. Both components share identical packaging and thermal ratings.