BA982-GS08

RF Diode Overview

The BA982-GS08 is a silicon planar band switching diode manufactured by Vishay Semiconductors in the QuadroMELF SOD-80 package. It features a reverse voltage rating of 35 V and a forward continuous current capacity of 100 mA. The device exhibits low dynamic forward resistance, with a maximum value of 0.7 Ω at 3 mA forward current and 100 MHz frequency. Diode capacitance is specified as 1.25 pF typical at 1 V reverse bias and 100 MHz. Additional electrical characteristics include a forward voltage of 1000 mV maximum at 100 mA and a reverse current of 50 nA maximum at 20 V.

RF Diode Feature Summary

• Silicon planar construction providing low dynamic forward resistance and low diode capacitance
• High reverse impedance suitable for RF applications
• QuadroMELF SOD-80 glass case packaging
• Qualified to AEC-Q101 automotive standards

RF Diode Applications

• Band switching in VHF-tuners

RF Diode Procurement Notes

Verify the specific ordering code suffix against official documentation to confirm packaging configuration. The GS08 designation corresponds to tape and reel packaging on a 7-inch reel containing 2,500 units. Confirm RoHS compliance status and ensure the component meets environmental directives relevant to the target deployment region before finalizing procurement specifications.

RF Diode Selection Notes

Select the BA982 variant when a lower dynamic forward resistance is required compared to the BA983 model. Ensure the operating frequency aligns with the specified test conditions for capacitance and resistance parameters. Verify that the thermal resistance characteristics on the printed circuit board meet the junction temperature requirements for the intended application environment.

RF Diode Part Context

This component belongs to the BA982/BA983 series of band switching diodes designed for high-frequency applications. The series utilizes a QuadroMELF SOD-80 package to provide compact surface-mount solutions. The BA982 is distinguished from the BA983 by its tighter tolerance on dynamic forward resistance, making it suitable for precision switching circuits requiring minimal signal loss.

RF Diode Replacement Considerations

The BA983-GS08 serves as a functional alternative within the same series, offering identical package dimensions and ratings but with a higher maximum dynamic forward resistance of 1.2 Ω at 3 mA.