RF Diode BAP64-03,115 product image

BAP64-03,115

$0.18
  • Description:RF DIODE PIN 175V 500MW SOD-323
  • Series:-

SKU:cccbd98d2f34 Category: Brand:

  
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BAP64-03,115 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 175V 500MW SOD-323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP64-03,115

  • Description:RF DIODE PIN 175V 500MW SOD-323
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):175V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.35pF @ 20V, 1MHz
  • Resistance @ If, F:1.35Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):500 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:SC-76, SOD-323
  • Supplier Device Package:SOD-323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP64-03,115

BAP64-03,115

RF Diode Overview

The BAP64-03 is a silicon PIN diode manufactured by NXP Semiconductors, housed in the SOD323 surface-mount package. It features a high voltage rating of 175 V continuous reverse voltage and supports up to 100 mA continuous forward current. The device exhibits low capacitance, ranging from 0.23 pF at 20 V reverse bias to 0.48 pF at zero bias (1 MHz). Forward resistance varies significantly with current, dropping from 40 Ω at 0.5 mA to 1.35 Ω at 100 mA (100 MHz). With a total power dissipation of 500 mW and operation capabilities up to 3 GHz, it serves as an effective RF resistor for attenuators and switches.

RF Diode Feature Summary

  • High voltage capability suitable for robust RF switching applications
  • Low diode capacitance ensures minimal signal distortion at high frequencies
  • Current-controlled operation allows precise attenuation adjustment
  • Very small plastic SMD package facilitates dense PCB layouts

RF Diode Applications

  • RF attenuators
  • RF switches
  • Microwave circuits operating up to 3 GHz

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's latest documentation to ensure compatibility with required packaging or marking codes. Confirm that the component status remains active for production use, as datasheet versions may supersede earlier releases. Cross-reference the SOD323 package dimensions with your board design files to guarantee mechanical fit before finalizing procurement orders.

RF Diode Selection Notes

Select this component when designing circuits requiring current-controlled RF attenuation or switching within the 3 GHz range. Ensure the thermal management strategy accommodates the 500 mW power dissipation limit at specified temperatures. Evaluate the forward resistance characteristics against the required insertion loss specifications for both on-state and off-state conditions in the target application frequency band.

RF Diode Part Context

This part belongs to NXP's discrete semiconductor portfolio, specifically designed as a planar PIN diode. The BAP64-03 variant utilizes the SOD323 package, which is standardized under IEC, JEDEC, and JEITA naming conventions. It supersedes previous data sheets dated August 1999, reflecting updated product specifications while maintaining the core electrical performance characteristics defined for RF control applications.

RF Diode Replacement Considerations

Consult official substitution lists for compatible PIN diodes in SOD323 packages. Verify that alternative components match the 175 V reverse voltage rating and similar capacitance profiles to maintain circuit performance without redesign.

BAP64-03,115BAP64-03,115
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