BAP65-05W,115

RF Diode Overview

The BAP65-05W is a silicon PIN diode featuring two planar elements in an SOT323 surface-mount package. It operates with a common cathode configuration and supports a continuous reverse voltage of 30 V and a forward current of 100 mA. The device exhibits low capacitance, ranging from 0.425 pF to 0.7 pF depending on bias conditions, and low forward resistance between 0.35 Ω and 0.95 Ω at specified currents. Total power dissipation is rated at 240 mW, with junction temperatures up to 150 °C.

RF Diode Feature Summary

• Two elements integrated in a common cathode configuration within a compact SMD plastic package
• High voltage capability suitable for current-controlled RF applications
• Low diode capacitance and forward resistance optimized for RF switching performance
• Qualified for automotive applications under AEC-Q101 standards

RF Diode Applications

• RF attenuators and switches
• Bandswitch circuits for TV tuners
• Series diode implementation in mobile communication transmit/receive switches

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as tape and reel specifications. Ensure that the component meets the required environmental standards and automotive qualification levels before finalizing procurement orders.

RF Diode Selection Notes

Select this component when designing circuits requiring low capacitance and fast switching speeds in a small form factor. Consider the thermal resistance characteristics and maximum power dissipation limits during layout planning to ensure reliable operation within the specified temperature range.

RF Diode Part Context

This part belongs to the NXP Semiconductors discrete semiconductor portfolio, specifically categorized under silicon PIN diodes. It is designed for high-frequency applications where low parasitic effects are critical. The product is manufactured using planar technology to ensure consistent electrical performance across production batches.

RF Diode Replacement Considerations

Consult the official datasheet for direct pin-compatible alternatives within the same series. Verify that any substitute component matches the package outline dimensions and electrical parameters to maintain circuit integrity without redesigning the PCB footprint.

RF Diode FAQ

What is the typical diode capacitance at zero bias?

The typical diode capacitance at zero bias (VR = 0 V) is 0.7 pF.

How is the device configured internally?

The device contains two planar PIN diodes arranged in a common cathode configuration.

What is the maximum continuous forward current rating?

The maximum continuous forward current (IF) is rated at 100 mA.