BAP70-02,115

$0.22

Description：RF DIODE PIN 50V 415MW SOD-523
Series：-

SKU:224f9f53ceee Category: RF Diodes Brand: NXP USA Inc.

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Product introduction

BAP70-02,115 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 50V 415MW SOD-523. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP70-02,115

Description：RF DIODE PIN 50V 415MW SOD-523
Series：-
Mfr：NXP USA Inc.
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Type：PIN - Single
Voltage - Peak Reverse (Max)：50V
Current - Max：100 mA
Capacitance @ Vr, F：0.25pF @ 20V, 1MHz
Resistance @ If, F：1.9Ohm @ 100mA, 100MHz
Power Dissipation (Max)：415 mW
Operating Temperature：-65°C ~ 150°C (TJ)
Package / Case：SC-79, SOD-523
Supplier Device Package：SOD-523
Grade：-
Qualification：-

RF Diode datasheet and documents for BAP70-02,115

BAP70-02,115

RF Diode Overview

The BAP70-02 is a planar silicon PIN diode housed in an SOD523 ultra-small surface-mount plastic package. It functions as a high-voltage, current-controlled RF resistor suitable for attenuators. The device features low diode capacitance and very low series inductance. Key electrical parameters include a maximum continuous reverse voltage of 50 V and a forward current rating of 100 mA. At 25 °C, the typical forward voltage is 0.9 V at 50 mA, with a maximum reverse current of 100 nA at 50 V. Diode capacitance ranges from 200 fF to 250 fF at 20 V reverse bias. Forward resistance varies from 1.4 Ω to 1.9 Ω at 100 mA forward current.

RF Diode Feature Summary

High voltage, current-controlled RF resistor design
Low diode capacitance for signal integrity
Very low series inductance
Qualified for automotive applications

RF Diode Applications

RF attenuators
(SAT) TV systems
Car radio equipment

RF Diode Procurement Notes

Verify the component against the official NXP data sheet Rev. 8 dated December 11, 2018. Confirm the marking code K8 and SOD523 package type match the physical unit. Ensure the part meets AEC-Q101 qualification requirements if intended for automotive deployment. Cross-reference the ordering information table to validate the specific variant.

RF Diode Selection Notes

Select this component when a compact, current-controlled RF resistor is required for attenuator circuits. The SOD523 package offers space efficiency for dense layouts. Consider the low series inductance and capacitance characteristics for high-frequency performance. Verify that the 50 V reverse voltage and 100 mA forward current ratings align with the system's operational limits.

RF Diode Part Context

This silicon PIN diode is manufactured by NXP Semiconductors. It is designed for use in radio frequency applications requiring precise attenuation control. The product utilizes a planar technology structure within a leadless ultra-small plastic package. It serves as a specialized discrete semiconductor component for signal processing and power management in electronic devices.