BAR 88-02V E6327

RF Diode Overview

The BAR 88-02V E6327 is a silicon PIN diode from Infineon Technologies, designed for low current antenna switching in handheld applications. It features very low forward resistance and low capacitance at zero volt reverse bias above 1 GHz. The device operates with a maximum reverse voltage of 80 V and a forward current of 100 mA. Total power dissipation is rated at 250 mW. Junction temperature reaches up to 150 °C, while the operating range spans -55 °C to +125 °C. It utilizes an SC79 package configuration.

RF Diode Feature Summary

• Optimized for low current antenna switching in handheld devices
• Very low forward resistance at minimal drive currents
• Low capacitance at zero volt reverse bias for high frequency performance
• Very low signal distortion characteristics

RF Diode Applications

• Antenna switches in handheld applications
• RF signal routing
• High frequency switching circuits

RF Diode Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status and check for lead-free packaging specifications. Ensure storage conditions remain within specified limits to maintain junction integrity. Review datasheet revisions for any updates regarding thermal resistance or electrical characteristics before finalizing procurement orders.

RF Diode Selection Notes

Select this component when low forward resistance and minimal signal distortion are required for RF switching. Consider the SC79 package dimensions for board layout constraints. Evaluate thermal management requirements based on the 250 mW power dissipation limit. Verify that the 80 V reverse voltage rating aligns with circuit peak inverse voltage demands.

RF Diode Part Context

This part belongs to the BAR88 series of silicon PIN diodes manufactured by Infineon Technologies. The series includes variants like the BAR88-02LRH, which shares similar electrical properties but differs in package type. These components are engineered specifically for mobile communication devices requiring efficient RF signal control.

RF Diode Replacement Considerations

Direct substitutes include other single PIN diodes in SC79 packages with comparable 80 V ratings and low capacitance values. Verify pinout compatibility and thermal resistance parameters before substitution.