RF Diode BAR6302WH6327XTSA1 product image

BAR6302WH6327XTSA1

$0.33
  • Description:RF DIODE PIN 50V 250MW SCD-80
  • Series:-

SKU:90b931746ce2 Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BAR6302WH6327XTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 50V 250MW SCD-80. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR6302WH6327XTSA1

  • Description:RF DIODE PIN 50V 250MW SCD-80
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.3pF @ 5V, 1MHz
  • Resistance @ If, F:1Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-80
  • Supplier Device Package:SCD-80
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAR6302WH6327XTSA1

BAR6302WH6327XTSA1

RF Diode Overview

The BAR6302WH6327XTSA1 is a PIN diode manufactured by Infineon Technologies, designed for RF switching applications. It features a common cathode configuration housed in an SOT-323-3 surface-mount package. The device operates with silicon technology and holds AEC-Q100 qualification for automotive reliability. Key electrical parameters include a maximum reverse voltage of 50 V and a typical carrier lifetime of 1550 ns. The component supports a maximum forward current of 100 mA and exhibits a low junction capacitance of 0.35 pF at zero bias, ensuring minimal signal loss in high-frequency circuits.

RF Diode Feature Summary

  • Common cathode PIN diode structure optimized for RF switching
  • AEC-Q100 qualified for automotive electronics environments
  • Low junction capacitance for high-frequency signal integrity

RF Diode Applications

  • RF antenna switching networks
  • Mobile phone front-end modules
  • Wireless communication equipment

RF Diode Procurement Notes

Verify the specific suffix WH6327XTSA1 against official Infineon documentation to confirm tape-and-reel packaging specifications. Ensure compatibility with standard SOT-323 footprint designs during procurement planning. Cross-reference the part number with authorized distributors to validate current production status and availability constraints.

RF Diode Selection Notes

Select this component when a common cathode PIN diode is required for RF switching within automotive or industrial applications. The SOT-323-3 package suits space-constrained PCB layouts. Verify that the 50 V reverse voltage rating meets the circuit's peak inverse voltage requirements. Confirm thermal management needs align with the device's power dissipation capabilities.

RF Diode Part Context

This part belongs to Infineon's BAR63 series of PIN diodes, which are widely used in RF front-end modules. The series offers various configurations including common cathode and common anode options. These components are engineered for high-speed switching and low insertion loss in wireless communication systems.

RF Diode Replacement Considerations

Check for direct replacements within the BAR63 series such as BAR6304WH6327XTSA1 if pinout compatibility allows. Verify equivalent performance metrics from other manufacturers like NXP or Skyworks before substitution.

BAR6302WH6327XTSA1BAR6302WH6327XTSA1
$0.33
Buy Now

Recent News