BAR6403WE6327HTSA1

RF Diode Overview

The BAR6403WE6327HTSA1 is a silicon PIN diode designed for low signal distortion in RF applications up to 3 GHz. It features a nominal 50 μm I-region width and a typical carrier lifetime of 1550 ns, resulting in low forward resistance and minimal distortion. The device operates with a maximum reverse voltage of 150 V and a forward current of 100 mA. Key electrical parameters include a typical capacitance of 0.61 pF at 0 V reverse bias (1 MHz) and a forward resistance of 2.7 Ω at 10 mA forward current (100 MHz). Packaged in the industry-standard SOD323 surface-mount format, it is qualified for industrial environments.

RF Diode Feature Summary

• Optimized for low signal distortion in high-frequency switching applications
• Designed to withstand large RF voltages while maintaining low insertion loss
• Utilizes a specific I-region width and carrier lifetime profile for superior RF performance

RF Diode Applications

• Low bias current RF switches
• High-speed interface switches
• RF attenuators
• Wireless communication systems
• High speed data networks

RF Diode Procurement Notes

Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the required package and tape/reel specifications. Ensure handling procedures account for ESD sensitivity during storage and assembly. Cross-reference datasheet revision history to ensure compatibility with current design requirements.

RF Diode Selection Notes

Select this component when low distortion and high isolation are critical for frequencies up to 3 GHz. Evaluate thermal constraints based on the specified junction-to-soldering point thermal resistance. Consider the SOD323 footprint dimensions for PCB layout optimization. Verify that the operating temperature range meets the specific environmental conditions of the target application.

RF Diode Part Context

This part belongs to the BAR64 series of cost-optimized RF PIN diodes manufactured by Infineon Technologies. It is specifically engineered for surface mount applications requiring robust performance in switch and attenuator circuits. The product is designated as an individual datasheet item rather than part of a broader family document.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Infineon technical support for validated alternatives if this component becomes unavailable.

RF Diode FAQ

What is the typical capacitance value at 1 GHz?

The typical capacitance is 0.2 pF at 0 V reverse bias for frequencies greater than or equal to 1 GHz.

What is the maximum allowable junction temperature?

The maximum junction temperature (TJ) is 150 °C.

How is the charge carrier lifetime defined for this device?

The typical charge carrier lifetime (τrr) is 1550 ns, measured under specific test conditions including IF = 10 mA and IR = 6 mA.