RF Diode BAR6406WE6327 product image

BAR6406WE6327

$0.08
  • Description:RF DIODE PIN 150V 250MW SOT-323
  • Series:-

SKU:4e24c4f2bcc0 Category: Brand:

  
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BAR6406WE6327 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 150V 250MW SOT-323. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAR6406WE6327

  • Description:RF DIODE PIN 150V 250MW SOT-323
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):150V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.35pF @ 20V, 1MHz
  • Resistance @ If, F:1.35Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SOT-323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAR6406WE6327

BAR6406WE6327

RF Diode Overview

The BAR6406WE6327 is a dual Schottky barrier diode with a common anode configuration, manufactured by Infineon Technologies. It is housed in a surface-mount SOT-323 (SC-70) package designed for high-frequency applications. The device features a maximum repetitive reverse voltage of 40 V and a forward current rating of 250 mA. Key electrical parameters include a low forward voltage drop of 570 mV at the rated current and a maximum reverse leakage current of 2 µA. The component supports a wide operating temperature range from -55 °C to +150 °C and can withstand a forward surge current of 800 mA.

RF Diode Feature Summary

  • Dual cathode common anode configuration for efficient signal mixing or clamping
  • Low forward voltage drop for improved power efficiency
  • High-speed switching capability suitable for RF applications
  • Compact SOT-323 surface-mount package for space-constrained designs

RF Diode Applications

  • RF mixer circuits
  • Signal clipping and protection
  • Logic level shifting

RF Diode Procurement Notes

Verify the specific ordering suffix WE6327 to ensure correct tape-and-reel packaging and binning specifications as defined by Infineon. Confirm RoHS compliance status through official material declaration documents prior to integration into production assemblies.

RF Diode Selection Notes

Select this component when a low-capacitance, high-speed dual Schottky diode is required in a minimal footprint. Ensure the circuit design respects the 40 V peak inverse voltage limit and the 250 mA continuous forward current constraint under all thermal conditions.

RF Diode Part Context

This part belongs to the BAR64 series of small-signal Schottky diodes. It serves as a compact alternative to larger discrete diodes in high-frequency analog and RF front-end modules where low junction capacitance and fast recovery times are critical performance factors.

RF Diode Replacement Considerations

Publicly confirmed direct substitute part numbers are not available in the provided documentation. Verify pin compatibility and electrical equivalence with generic BAT64 variants only if official cross-reference data is obtained from the manufacturer.

BAR6406WE6327BAR6406WE6327
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