BAR6502VH6327XTSA1

RF Diode Overview

The BAR6502VH6327XTSA1 is a silicon PIN diode from the BAR65 series, designed for mobile communication low-loss transmit-receiver switches and TV-tuner band switching. It features a SC79 (SOD-523) package with single lead configuration. Key electrical parameters include a maximum reverse voltage of 30 V and a forward current rating of 100 mA. The device exhibits very low forward resistance, typically 0.65 Ω at 5 mA, and low capacitance, typically 0.5 pF at 0 V. Total power dissipation is rated at 250 mW, with a junction temperature limit of 150 °C and an operating temperature range from -55 °C to 125 °C.

RF Diode Feature Summary

• Optimized for low-loss signal transmission in RF switch applications
• Provides fast switching capabilities suitable for high-frequency circuits
• Features extremely low parasitic capacitance for minimal signal attenuation

RF Diode Applications

• Low loss transmit-receiver switches in mobile communication systems
• Band switching circuits for TV tuners
• Fast switching applications requiring minimal insertion loss

RF Diode Procurement Notes

Verify component authenticity by checking the marking code against Infineon's official date code tables. Confirm the package type matches the required footprint. Ensure the ordering suffix aligns with specific tape-and-reel requirements. Cross-reference the datasheet revision to confirm parameter consistency before finalizing procurement orders.

RF Diode Selection Notes

Select this component when designing circuits that require minimal insertion loss and low capacitance in the RF path. Consider the thermal resistance characteristics if operating near the upper temperature limits. Evaluate the forward voltage drop at expected bias currents to ensure adequate drive levels are met within the system constraints.

RF Diode Part Context

This part belongs to the BAR65 series of silicon PIN diodes manufactured by Infineon Technologies. The series includes variants like BAR65-02L and BAR65-03W, which differ primarily in package types such as TSLP-2-1 or SOD323. These components share similar electrical performance profiles tailored for RF switching and tuning applications.

RF Diode Replacement Considerations

Direct substitutes within the same family include BAR65-02L and BAR65-03W, though package differences must be accounted for during PCB layout adaptation. Verify pinout compatibility and thermal dissipation capabilities when transitioning between these specific series variants.

RF Diode FAQ

What is the typical diode capacitance value at zero bias?

The typical diode capacitance is 0.5 pF when measured at 0 V reverse bias.

What is the maximum allowable junction temperature?

The maximum junction temperature (Tj) is specified as 150 °C.

How does the forward resistance vary with current?

Forward resistance decreases as forward current increases; it is typically 1 Ω at 1 mA and 0.56 Ω at 10 mA.