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BAS70-05-G3-08 is listed in the Diode Arrays range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is DIODE ARR SCHOTT 70V 200MA SOT23. Review the specifications below when checking this part for your BOM.
The BAS70-05-G3-08 is a small signal Schottky diode manufactured by Vishay Semiconductors. It features a common cathode circuit configuration within an SOT-23 surface-mount package. The device supports a repetitive peak reverse voltage of 70 V and a continuous forward current of 200 mA. Electrical characteristics include a maximum forward voltage of 1 V at 50 mA, a leakage current of up to 100 nA at 50 V, and a reverse recovery time of 5 ns. Thermal resistance from junction to ambient air is specified at 460 K/W on an FR-4 board.
Verify the specific ordering code matches the required tape and reel packaging dimensions. Confirm that the G3 suffix indicates green commercial grade material categorization compliant with relevant directives. Ensure the component selection aligns with the documented absolute maximum ratings for thermal and electrical stress conditions during operation.
Select this component when a common cathode dual diode configuration is required in a minimal footprint. The SOT-23 package suits automated surface-mount assembly processes. Consider the 70 V reverse voltage rating and 200 mA forward current limits to ensure adequate headroom for the target application's electrical demands.
This part belongs to the BAS70-00-G through BAS70-06-G series of small signal Schottky diodes. The series offers various internal circuit configurations including single, dual serial, common cathode, and common anode arrangements. All variants share similar mechanical and electrical properties while differing in internal connectivity to suit diverse schematic requirements.
BAS70-05-E3-08
The BAS70-05 utilizes a common cathode configuration, connecting the cathodes of two internal Schottky diodes together.
The device is protected by a PN junction guardring structure designed to withstand excessive voltage stresses such as electrostatic discharges.
The operating temperature range extends from -55 °C to +125 °C, while the storage temperature range spans from -65 °C to +150 °C.
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