BAT1502ELSE6327XTSA1

$0.12

Description：RF DIODE PG-TSSLP-2-3
Series：*

SKU:f28bebbf48ac Category: RF Diodes Brand: Infineon Technologies

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Product introduction

BAT1502ELSE6327XTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PG-TSSLP-2-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT1502ELSE6327XTSA1

Description：RF DIODE PG-TSSLP-2-3
Series：*
Mfr：Infineon Technologies
Package：Tape & Reel (TR)
Diode Type：-
Voltage - Peak Reverse (Max)：-
Current - Max：-
Capacitance @ Vr, F：-
Resistance @ If, F：-
Power Dissipation (Max)：-
Operating Temperature：-
Package / Case：0201 (0603 Metric)
Supplier Device Package：PG-TSSLP-2-3
Grade：-
Qualification：-

RF Diode datasheet and documents for BAT1502ELSE6327XTSA1

BAT1502ELSE6327XTSA1

RF Diode Overview

The BAT1502ELSE6327XTSA1 is a single silicon RF Schottky diode manufactured by Infineon Technologies. It features a low barrier height and an integrated on-chip guard ring for over-voltage protection. The device operates within a temperature range of -55°C to +150°C. Key electrical parameters include a maximum reverse voltage (VRRM) of 4 V, a forward current (IF) of 110 mA, and a power dissipation (PD) of 100 mW. Typical characteristics at TA = 25°C include a forward voltage (VF) of 0.25 V at IF = 1 mA, a reverse current (IR) of 5 μA at VR = 1 V, a junction capacitance (C) of 0.2 pF at VR = 0 V and f = 1 MHz, and an inductance (LS) of 0.2 nH.

RF Diode Feature Summary

Low inductance design suitable for high-frequency applications up to 12 GHz
Integrated on-chip guard ring provides over-voltage protection
Leadless TSSLP-2-3 package with a 0201 footprint

RF Diode Applications

Mixers in mobile devices
Detectors in modules and embedded systems

RF Diode Procurement Notes

Verify the component against official datasheet specifications before integration. Confirm that the ordering suffix matches the required packaging format. Ensure handling precautions are followed due to electrostatic discharge sensitivity. Validate compliance with industrial application standards as defined by JEDEC tests.

RF Diode Selection Notes

Select this component for circuits requiring low barrier height and minimal junction capacitance. The integrated guard ring makes it suitable for environments where over-voltage protection is necessary. Verify that the operating frequency does not exceed 12 GHz and that thermal constraints align with the specified power dissipation limits.

RF Diode Part Context

This part belongs to the BAT15 series of single silicon RF Schottky diodes. It is specifically designed for mixer and detector functions in high-frequency applications. The device utilizes a leadless TSSLP-2-3 package to minimize parasitic effects.