BFL4004-1E

Single FETs, MOSFETs Overview

The BFL4004-1E is an N-channel power MOSFET from onsemi, housed in a TO-220F-3FS package. It features a drain-to-source voltage (V_DSS) of 800 V and a continuous drain current (I_DC) of 6.5 A at a case temperature of 150°C. The static drain-to-source on-state resistance (R_DS(on)) is typically 1.9 Ω with a maximum of 2.5 Ω at I_D=3.25 A and V_GS=10 V. Key electrical parameters include an input capacitance (C_iss) of 710 pF, total gate charge (Q_g) of 36 nC, and a forward transfer admittance (|y_fs|) ranging from 1.7 to 3.4 S.

Single FETs, MOSFETs Feature Summary

• High-voltage capability with an 800 V drain-to-source breakdown voltage rating for robust operation in demanding power environments.
• Low on-state resistance optimized for high efficiency, achieving typical values of 1.9 Ω under standard drive conditions.
• Integrated body diode with defined reverse recovery characteristics suitable for inductive switching applications.

Single FETs, MOSFETs Applications

• High-voltage DC/DC converter circuits
• Inductive load switching systems
• Power supply output stages

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-1E' corresponds to the tube packaging configuration containing 50 pieces per unit. Confirm that the component meets lead-free requirements as indicated in the official documentation. Ensure thermal management solutions align with the specified allowable power dissipation limits under your operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when an 800 V rating is required alongside moderate current handling capabilities up to 6.5 A. Consider the TO-220F-3FS package for through-hole mounting and adequate heat dissipation. Evaluate the gate charge and on-resistance trade-offs against your specific switching frequency and efficiency targets.

Single FETs, MOSFETs Part Context

This device belongs to the BFL40 series of N-channel power MOSFETs designed by onsemi. These components are engineered for general-purpose power switching applications requiring high voltage tolerance. The series utilizes advanced silicon technology to balance low conduction losses with reliable switching performance across various industrial power electronics architectures.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference lists for verified substitutes. Ensure any replacement matches the 800 V rating, TO-220F-3FS footprint, and electrical specifications such as R_DS(on) and Q_g to maintain circuit integrity.