RF Amplifiers BGA10H1MN9E6327XTSA1 product image

BGA10H1MN9E6327XTSA1

$0.64
  • Description:RF MMIC 2.3 TO 2.7 GHZ
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:fa8cd75d053d Category: Brand:

  
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BGA10H1MN9E6327XTSA1 is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF MMIC 2.3 TO 2.7 GHZ. Review the specifications below when checking this part for your BOM.

RF Amplifiers specifications for BGA10H1MN9E6327XTSA1

  • Description:RF MMIC 2.3 TO 2.7 GHZ
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Frequency:2.3GHz ~ 2.7GHz
  • P1dB:-19dBm
  • Gain:19.7dB
  • Noise Figure:12.9dB
  • RF Type:4G, 5G
  • Voltage - Supply:1.1V ~ 2V
  • Current - Supply:7.5mA
  • Test Frequency:2.6GHz
  • Mounting Type:Surface Mount
  • Package / Case:9-XFLGA
  • Supplier Device Package:PG-TSNP-9-2
  • Grade:-
  • Qualification:-

RF Amplifiers datasheet and documents for BGA10H1MN9E6327XTSA1

BGA10H1MN9E6327XTSA1

RF Amplifiers Overview

The BGA10H1MN9E6327XTSA1 is a general-purpose RF MMIC amplifier manufactured by Infineon Technologies. It operates within the frequency range of 2.3 GHz to 2.7 GHz, supporting applications in 4G and 5G wireless systems. The device utilizes silicon technology and is housed in a PG-TSNP-9 surface-mount package. Key electrical characteristics include a typical gain of 20.3 dB and a noise figure of 0.6 dB. It functions with a supply voltage between 1.1 V and 3.3 V, drawing a current of 2.2 mA. The amplifier exhibits a P1dB compression point of -17 dBm and an OIP3 of -7 dBm, ensuring performance across an operating temperature range of -40°C to +85°C.

RF Amplifiers Feature Summary

  • Integrated monolithic microwave integrated circuit (MMIC) design for compact RF front-end implementation
  • Optimized for low noise figure and high linearity in cellular communication bands
  • Operates on low supply voltages suitable for portable battery-powered devices

RF Amplifiers Applications

  • 4G LTE infrastructure and user equipment
  • 5G mobile communication modules
  • General purpose RF signal amplification

RF Amplifiers Procurement Notes

Verify the specific datasheet revision and ordering suffix when sourcing. Confirm that the PG-TSNP-9 package dimensions match the target PCB footprint. Ensure compatibility with the intended supply voltage range of 1.1 V to 3.3 V. Check for any RoHS compliance documentation required for the manufacturing region. Validate thermal management requirements for the specified operating temperature range.

RF Amplifiers Selection Notes

Select this component for designs requiring a balance of low noise and moderate gain in the 2.3–2.7 GHz band. The low power consumption makes it suitable for energy-constrained mobile applications. Consider the small form factor if board space is limited. Evaluate system-level linearity requirements against the provided OIP3 specifications. Ensure impedance matching networks are designed for the specified frequency range to maximize gain.

RF Amplifiers Part Context

This part belongs to Infineon's portfolio of RF amplifiers designed for wireless connectivity. It complements other RF switches and tuners in frontend module architectures. The TSNP package family offers standardized footprints for easy integration into existing layouts. It serves as a building block for modern cellular handsets and base station components.

RF Amplifiers Replacement Considerations

Consult official Infineon documentation for qualified alternatives. Cross-reference pinouts and electrical parameters before substitution.

BGA10H1MN9E6327XTSA1BGA10H1MN9E6327XTSA1
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