RF Amplifiers BLM8G0710S-60PBY product image

BLM8G0710S-60PBY

  • Description:RF FET LDMOS 65V 36.2DB SOT12112
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:d8ec23aefb7c Category: Brand:

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BLM8G0710S-60PBY is listed in the RF Amplifiers range at ChipApex. The manufacturer field lists Ampleon USA Inc.. Its product description is RF FET LDMOS 65V 36.2DB SOT12112. Review the specifications below when checking this part for your BOM.

RF Amplifiers specifications for BLM8G0710S-60PBY

  • Description:RF FET LDMOS 65V 36.2DB SOT12112
  • Series:-
  • Mfr:Ampleon USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Frequency:957.5MHz
  • P1dB:-
  • Gain:36.2dB
  • Noise Figure:-
  • RF Type:-
  • Voltage - Supply:28V
  • Current - Supply:-
  • Test Frequency:-
  • Mounting Type:Surface Mount
  • Package / Case:SOT-1211-2
  • Supplier Device Package:16-HSOPF
  • Grade:-
  • Qualification:-

RF Amplifiers datasheet and documents for BLM8G0710S-60PBY

BLM8G0710S-60PBY

RF Amplifiers Overview

The BLM8G0710S-60PBY is a dual-section, two-stage power MMIC utilizing Ampleon's GEN8 LDMOS technology. It operates within the 0.7 to 1.0 GHz frequency range with a center frequency of 957.5 MHz. The device delivers 60 W output power and provides 34.7 dB gain at a 28 V supply voltage. Packaged in an SOT1211-2 surface mount housing, it supports high-efficiency RF amplification for multiband applications.

RF Amplifiers Feature Summary

  • Dual-section architecture enabling two-stage power amplification
  • Utilizes advanced GEN8 LDMOS technology for robust performance
  • Designed as a multiband device for versatile frequency operation

RF Amplifiers Applications

  • Multiband RF power amplification
  • Base station transmitter modules
  • Broadband communication systems

RF Amplifiers Procurement Notes

Verify the specific suffix 'PBY' against official Ampleon documentation to confirm package type and tape/reel specifications. Ensure compatibility with SOT1211-2 footprint requirements during PCB layout. Cross-reference thermal management needs with the datasheet's maximum ratings to prevent overheating in high-power scenarios.

RF Amplifiers Selection Notes

Select this component when a dual-section LDMOS MMIC is required for the 700-1000 MHz band. Consider the 28 V operating voltage and 60 W power capability relative to system constraints. Evaluate the SOT1211-2 package size against available board space and thermal dissipation capabilities compared to alternative single-section devices.

RF Amplifiers Part Context

This part belongs to Ampleon's BLM8G series of LDMOS power MMICs. These components are engineered for high linearity and efficiency in RF applications. The GEN8 technology node represents a specific generation of process improvements aimed at enhancing power density and reliability for modern wireless infrastructure.

RF Amplifiers Replacement Considerations

Official substitutes include variants such as BLM8G0710S-60PB or BLM8G0710S-60PBG. Verify pinout compatibility and electrical parameter equivalence before substitution. Consult Ampleon's replacement guide to ensure functional parity in multiband amplifier designs.

BLM8G0710S-60PBYBLM8G0710S-60PBY

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