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BMS4007-1E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 75V 60A TO-220ML. Review the specifications below when checking this part for your BOM.
The BMS4007 is an N-channel power MOSFET from onsemi, housed in a TO-220ML(LS) package. It features a drain-to-source voltage (V_DSS) of 75 V and a continuous drain current (I_D) of 60 A at 25°C case temperature. The device exhibits a typical static drain-to-source on-state resistance (R_DS(on)) of 6 mΩ at V_GS=10V and I_D=30A, with a maximum of 7.8 mΩ. Key electrical characteristics include a total gate charge (Q_g) of 160 nC, input capacitance (C_iss) of 9700 pF, and a forward transfer admittance (|y_fs|) of 110 S. The component supports a single-pulse avalanche energy of 299 mJ and operates within a channel temperature range up to 150°C.
Verify the specific ordering suffix and packaging configuration against official onsemi documentation before procurement. Confirm that the TO-220ML(LS) package dimensions and pinout align with your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified allowable power dissipation limits under your operating conditions.
Select this component when a 75V N-channel MOSFET with high current capacity is required. Consider the 6 mΩ R_DS(on) for minimizing conduction losses in low-voltage, high-current designs. Evaluate the gate charge parameters against your driver capabilities to ensure optimal switching performance and minimize switching losses in your specific circuit topology.
The BMS4007 belongs to onsemi's discrete power MOSFET portfolio, designed for general-purpose power switching applications. It utilizes silicon technology optimized for low on-resistance and high current density. The TO-220ML(LS) package provides a balance between thermal performance and mounting flexibility, making it suitable for various industrial and consumer electronics power stages.
Consult onsemi's cross-reference tools or authorized distributors for verified equivalent parts. Ensure any substitute matches the 75V V_DSS, 60A I_D, and TO-220ML(LS) package specifications. Verify that alternative devices meet or exceed the original R_DS(on) and thermal performance requirements.
The maximum allowable power dissipation (P_D) is 30 W when the case temperature (Tc) is maintained at 25°C.
The typical input capacitance (C_iss) is 9700 pF, measured at V_DS=20V and f=1MHz.
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