Single FETs, MOSFETs BMS4007-1E product image

BMS4007-1E

$2.82
  • Description:MOSFET N-CH 75V 60A TO-220ML
  • Series:*
  • Mfr:onsemi
  • Package:Tube

SKU:04eb9fe29e9b Category: Brand:

  
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BMS4007-1E is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists onsemi. Its product description is MOSFET N-CH 75V 60A TO-220ML. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BMS4007-1E

  • Description:MOSFET N-CH 75V 60A TO-220ML
  • Series:*
  • Mfr:onsemi
  • Package:Tube
  • FET Type:-
  • Technology:-
  • Drain to Source Voltage (Vdss):-
  • Current - Continuous Drain (Id) @ 25°C:-
  • Drive Voltage (Max Rds On, Min Rds On):-
  • Rds On (Max) @ Id, Vgs:-
  • Vgs(th) (Max) @ Id:-
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):-
  • Input Capacitance (Ciss) (Max) @ Vds:-
  • FET Feature:-
  • Power Dissipation (Max):-
  • Operating Temperature:-
  • Grade:-
  • Qualification:-
  • Mounting Type:-
  • Supplier Device Package:-
  • Package / Case:-

Single FETs, MOSFETs datasheet and documents for BMS4007-1E

BMS4007-1E

Single FETs, MOSFETs Overview

The BMS4007 is an N-channel power MOSFET from onsemi, housed in a TO-220ML(LS) package. It features a drain-to-source voltage (V_DSS) of 75 V and a continuous drain current (I_D) of 60 A at 25°C case temperature. The device exhibits a typical static drain-to-source on-state resistance (R_DS(on)) of 6 mΩ at V_GS=10V and I_D=30A, with a maximum of 7.8 mΩ. Key electrical characteristics include a total gate charge (Q_g) of 160 nC, input capacitance (C_iss) of 9700 pF, and a forward transfer admittance (|y_fs|) of 110 S. The component supports a single-pulse avalanche energy of 299 mJ and operates within a channel temperature range up to 150°C.

Single FETs, MOSFETs Feature Summary

  • Low on-state resistance for efficient power conduction
  • High current handling capability suitable for power switching applications
  • Robust avalanche energy rating for improved reliability under stress conditions

Single FETs, MOSFETs Applications

  • DC-DC converters
  • Motor control circuits
  • Power management systems

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and packaging configuration against official onsemi documentation before procurement. Confirm that the TO-220ML(LS) package dimensions and pinout align with your PCB footprint requirements. Ensure thermal management solutions are adequate for the specified allowable power dissipation limits under your operating conditions.

Single FETs, MOSFETs Selection Notes

Select this component when a 75V N-channel MOSFET with high current capacity is required. Consider the 6 mΩ R_DS(on) for minimizing conduction losses in low-voltage, high-current designs. Evaluate the gate charge parameters against your driver capabilities to ensure optimal switching performance and minimize switching losses in your specific circuit topology.

Single FETs, MOSFETs Part Context

The BMS4007 belongs to onsemi's discrete power MOSFET portfolio, designed for general-purpose power switching applications. It utilizes silicon technology optimized for low on-resistance and high current density. The TO-220ML(LS) package provides a balance between thermal performance and mounting flexibility, making it suitable for various industrial and consumer electronics power stages.

Single FETs, MOSFETs Replacement Considerations

Consult onsemi's cross-reference tools or authorized distributors for verified equivalent parts. Ensure any substitute matches the 75V V_DSS, 60A I_D, and TO-220ML(LS) package specifications. Verify that alternative devices meet or exceed the original R_DS(on) and thermal performance requirements.

Single FETs, MOSFETs FAQ

What is the maximum allowable power dissipation at a case temperature of 25°C?

The maximum allowable power dissipation (P_D) is 30 W when the case temperature (Tc) is maintained at 25°C.

What is the typical input capacitance of the BMS4007?

The typical input capacitance (C_iss) is 9700 pF, measured at V_DS=20V and f=1MHz.

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