Single FETs, MOSFETs BS170P product image

BS170P

$1.00
  • Description:MOSFET N-CH 60V 270MA TO92-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk

SKU:7230b77115e3 Category: Brand:

  
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BS170P is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 60V 270MA TO92-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BS170P

  • Description:MOSFET N-CH 60V 270MA TO92-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Bulk
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:270mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id:3V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:60 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):625mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Through Hole
  • Supplier Device Package:TO-92
  • Package / Case:TO-226-3, TO-92-3 (TO-226AA)

Single FETs, MOSFETs datasheet and documents for BS170P

BS170P

Single FETs, MOSFETs Overview

The BS170P is an N-channel enhancement mode vertical DMOS FET manufactured by Diodes Incorporated. It features a 60V drain-source voltage rating and a maximum continuous drain current of 270mA at 25°C ambient temperature. The device exhibits a static drain-source on-state resistance of 5Ω at VGS=10V and ID=200mA, with a forward transconductance of 200mS. It operates within a junction and storage temperature range of -55°C to +150°C and is housed in a TO-92 compatible E-Line package.

Single FETs, MOSFETs Feature Summary

  • Vertical DMOS technology for enhanced performance
  • High breakdown voltage capability
  • Low on-state resistance
  • Fast switching characteristics

Single FETs, MOSFETs Applications

  • General purpose switching applications
  • Power management circuits
  • Amplifier stages

Single FETs, MOSFETs Procurement Notes

Verify the specific manufacturer designation as Diodes Incorporated acquired Zetex, which originally produced this part. Confirm the package type matches the required TO-92 compatible footprint. Check datasheet revisions for any parameter updates. Ensure the component meets the required operating temperature range for the intended application environment.

Single FETs, MOSFETs Selection Notes

Select this component for low-power switching applications requiring moderate voltage ratings. Consider the 270mA continuous current limit when designing load circuits. Evaluate thermal dissipation requirements given the 625mW power dissipation rating. Verify compatibility with standard TO-92 mounting hardware and PCB layouts.

Single FETs, MOSFETs Part Context

This N-channel MOSFET belongs to the general-purpose discrete semiconductor category. It is designed for use in low-voltage, low-current switching and amplification tasks. The vertical DMOS structure provides improved performance over planar technologies. It serves as a cost-effective solution for basic transistor applications in consumer electronics and industrial control systems.

Single FETs, MOSFETs Replacement Considerations

Refer to ZVN3306A for graphical data comparison. Verify pinout compatibility before substitution. Check electrical parameters against original design requirements.

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