Single FETs, MOSFETs BS870-7 product image

BS870-7

$0.46
  • Description:MOSFET N-CH 60V 250MA SOT23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)

SKU:c61ca5aa4a22 Category: Brand:

  
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BS870-7 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Diodes Incorporated. Its product description is MOSFET N-CH 60V 250MA SOT23-3. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BS870-7

  • Description:MOSFET N-CH 60V 250MA SOT23-3
  • Series:-
  • Mfr:Diodes Incorporated
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • FET Type:N-Channel
  • Technology:MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss):60 V
  • Current - Continuous Drain (Id) @ 25°C:250mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On):10V
  • Rds On (Max) @ Id, Vgs:5Ohm @ 200mA, 10V
  • Vgs(th) (Max) @ Id:3V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs:-
  • Vgs (Max):±20V
  • Input Capacitance (Ciss) (Max) @ Vds:50 pF @ 10 V
  • FET Feature:-
  • Power Dissipation (Max):300mW (Ta)
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Grade:-
  • Qualification:-
  • Mounting Type:Surface Mount
  • Supplier Device Package:SOT-23-3
  • Package / Case:TO-236-3, SC-59, SOT-23-3

Single FETs, MOSFETs datasheet and documents for BS870-7

BS870-7

Single FETs, MOSFETs Overview

The BS870-7 is an N-channel enhancement mode MOSFET manufactured by Diodes Incorporated in a SOT23 package. It features a drain-source voltage (BVDSS) of 60V and a maximum continuous drain current (ID) of 250mA. The device exhibits a static drain-source on-resistance (RDS(ON)) of up to 5Ω at VGS = 10V and ID = 0.2A, with a typical value of 3.5Ω. Gate threshold voltage ranges from 1.0V to 3.0V at ID = 250µA. Input capacitance (Ciss) is typically 22pF at VDS = 10V. Total power dissipation is rated at 300mW with a thermal resistance (RθJA) of 417°C/W. Operating junction temperature spans -55°C to +150°C.

Single FETs, MOSFETs Feature Summary

  • Designed for high efficiency power management applications through minimized on-state resistance and superior switching performance.
  • Features low gate threshold voltage suitable for logic level gate drive switching.
  • Compliant with RoHS directives and halogen/antimony-free standards.

Single FETs, MOSFETs Applications

  • Motor Control
  • Power Management Functions
  • Backlighting

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix '-7-F' against official Diodes Incorporated documentation to confirm tape and reel packaging quantities. Ensure the component meets JEDEC reliability standards if required for the application. Confirm that the standard commercial grade part is appropriate, as automotive-grade alternatives require separate datasheets and qualification processes.

Single FETs, MOSFETs Selection Notes

Select this component for low-power switching tasks requiring a 60V rating and compact SOT23 footprint. Evaluate the 5Ω RDS(ON) limit to ensure it aligns with the target circuit's conduction loss requirements at the intended operating current. Consider the 250mA continuous current limit when designing for thermal constraints on FR-4 PCB layouts.

Single FETs, MOSFETs Part Context

This part belongs to the BS870 series of N-channel enhancement mode MOSFETs. The '-7' designation indicates the standard commercial grade version, distinct from the automotive-compliant BS870Q variant. It utilizes a molded plastic case with matte tin finish terminals, classified under UL flammability rating 94V-0.

Single FETs, MOSFETs Replacement Considerations

For automotive applications requiring AEC-Q100 qualification and IATF 16949 manufacturing, refer to the BS870Q part number listed in the related automotive grade documentation.

BS870-7BS870-7
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