BSB012NE2LX

Single FETs, MOSFETs Overview

The BSB012NE2LX is an n-Channel Power MOSFET from Infineon's OptiMOS™ family, designed for high power density and energy efficiency. It features a maximum drain-source voltage (VDS) of 25 V and a continuous drain current (ID) of 170 A at 25 °C case temperature. The device exhibits a maximum on-state resistance (RDS(on)) of 1.6 mΩ at VGS=4.5 V and 1.2 mΩ at VGS=10 V. Key dynamic parameters include a total gate charge (Qg) of 32 nC at VGS=10 V and an output charge (Qoss) of 35 nC. It operates within a junction temperature range of -40 °C to +150 °C.

Single FETs, MOSFETs Feature Summary

• Optimized for high-performance buck converter applications with ultra-low gate and output charges.
• Features double-sided cooling capability compatible with DirectFET® package MX footprint.
• Includes low parasitic inductance design and low profile construction under 0.7 mm.
• Subjected to 100% avalanche testing and gate resistance verification.

Single FETs, MOSFETs Applications

• On-board power supply for servers
• Power management for high-performance computing systems
• Synchronous rectification circuits
• High power density point-of-load converters

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix and packaging configuration directly with the manufacturer or authorized distributors before procurement. Confirm that the component meets all required environmental standards, including RoHS compliance and halogen-free specifications, as these attributes are critical for final assembly processes. Ensure thermal management solutions align with the specified thermal resistance values provided in the datasheet.

Single FETs, MOSFETs Selection Notes

Select this component when designing voltage regulator solutions for servers, datacom, and telecom applications requiring high efficiency and compact form factors. The low RDS(on) and fast switching characteristics make it suitable for synchronous control and sync FETs where EMI reduction is necessary. Evaluate the thermal performance against the application's heat dissipation requirements using the provided thermal resistance data.

Single FETs, MOSFETs Part Context

This part belongs to the OptiMOS™ 25V series, which targets demanding voltage regulation standards in computing applications. It utilizes the MG-WDSON-2 package to provide flexibility in optimizing space and cost. The technology focuses on achieving class-leading power density through superior thermal resistance and optimized electrical characteristics compared to standard MOSFETs.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools or contact Infineon Technologies for verified substitute part numbers. Do not assume compatibility based solely on similar voltage or current ratings; verify pinout, package dimensions, and electrical parameters against the original specification.

Single FETs, MOSFETs FAQ

Is the BSB012NE2LX qualified for automotive applications?

The datasheet states the device is qualified according to JEDEC standards for target applications such as servers and datacom. Use in automotive, aviation, or aerospace systems requires express written approval from Infineon Technologies.

What is the maximum pulsed drain current rating?

The maximum pulsed drain current (ID,pulse) is rated at 400 A at a case temperature of 25 °C.