BSB014N04LX3GXUMA1

$1.66

Description：MOSFET N-CH 40V 36A/180A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)

SKU:8ec645e6977a Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

BSB014N04LX3GXUMA1 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 36A/180A 2WDSON. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for BSB014N04LX3GXUMA1

Description：MOSFET N-CH 40V 36A/180A 2WDSON
Series：OptiMOS™
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：36A (Ta), 180A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：4.5V, 10V
Rds On (Max) @ Id, Vgs：1.4mOhm @ 30A, 10V
Vgs(th) (Max) @ Id：2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：196 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：16900 pF @ 20 V
FET Feature：-
Power Dissipation (Max)：2.8W (Ta), 89W (Tc)
Operating Temperature：-40°C ~ 150°C (TJ)
Grade：-
Qualification：-
Mounting Type：Surface Mount
Supplier Device Package：MG-WDSON-2, CanPAK M™
Package / Case：3-WDSON

Single FETs, MOSFETs datasheet and documents for BSB014N04LX3GXUMA1

BSB014N04LX3GXUMA1

Single FETs, MOSFETs Overview

The BSB014N04LX3GXUMA1 is an N-channel power MOSFET from Infineon Technologies, utilizing OptiMOS™ 3 technology. It features a maximum drain-source voltage (VDS) of 40 V and a typical on-resistance (RDS(on)) of 1.4 mΩ at 10 V gate drive. The device supports a continuous drain current (ID) of 180 A and a pulsed current (IDpuls) of up to 820 A. Packaged in DirectFET(M), it offers high thermal performance with a junction-to-case thermal resistance (RthJC) of 1.3 K/W and operates within a temperature range of -55 °C to 175 °C.

Single FETs, MOSFETs Feature Summary

Optimized for synchronous rectification applications
Enhanced thermal robustness with 175°C rating
100% avalanche tested for reliability

Single FETs, MOSFETs Applications

Synchronous rectification circuits
DC-DC converter designs
Power management systems

Single FETs, MOSFETs Procurement Notes

This component is officially classified as obsolete by the manufacturer and is no longer in active production. Procurement should focus exclusively on verified substitute part numbers or alternative sources that guarantee authenticity. Buyers must confirm the availability of original documentation and ensure compliance with supply chain verification standards due to the discontinued status.

Single FETs, MOSFETs Selection Notes

Engineers selecting this component should prioritize its low RDS(on) and high current handling capabilities for efficient power conversion. The DirectFET(M) package provides superior thermal dissipation compared to standard surface-mount options. Consider the 175°C operating limit for high-temperature environments, but verify compatibility with system-level thermal constraints and switching frequency requirements.

Single FETs, MOSFETs Part Context

BSB014N04LX3GXUMA1 belongs to the OptiMOS™ 3 family of N-channel power MOSFETs designed for high-efficiency power switching. This series emphasizes low conduction losses and robust avalanche performance. The specific model integrates advanced cell technology to minimize gate charge while maintaining high current density, suitable for compact power supply designs requiring high thermal stability.