BTA08-800CW3G

Triacs Overview

The BTA08-800CW3G is a silicon bidirectional thyristor (Triac) designed for high-performance full-wave AC control applications requiring high noise immunity and commutating di/dt. It features an 800 V peak repetitive off-state voltage and an 8.0 A RMS on-state current rating at a case temperature of 80°C. The device provides a minimum dV/dt of 1500 V/µs at 125°C, minimizing the need for snubber networks. It includes internal isolation rated at 2500 VRMS and is housed in an industry-standard TO-220AB package.

Triacs Feature Summary

• High noise immunity with a minimum dV/dt of 1500 V/µs at 125°C
• Internal electrical isolation rated at 2500 VRMS
• Uniform gate trigger currents across three quadrants
• Minimizes requirement for external snubber networks

Triacs Applications

• High performance full-wave AC control
• Static relay switching
• Phase control operations such as dimming and motor speed regulation

Triacs Procurement Notes

Verify the component marking against the official diagram to confirm authenticity. Ensure the ordering suffix matches the specific Pb-Free variant required. Confirm that the thermal management design accommodates the junction-to-case thermal resistance of 2.5 °C/W under expected load conditions.

Triacs Selection Notes

Select this Triac when an 800 V blocking voltage and 8 A RMS current capacity are required. The logic-level gate sensitivity allows direct interfacing with microcontrollers. Verify that the application does not exceed the 90 A non-repetitive surge current limit during startup or fault conditions.

Triacs Part Context

This component belongs to the BTA08 series of 8 Ampere Silicon Bidirectional Thyristors manufactured by ON Semiconductor. The 'W' suffix indicates a sensitive gate version, while '3G' denotes the lead-free packaging configuration within the TO-220AB form factor.

Triacs Replacement Considerations

BTA08-800C

Triacs FAQ

What is the maximum non-repetitive surge current?

The peak non-repetitive surge current is 90 A for one full cycle sine wave at 60 Hz with a case temperature of 25°C.

How is the device electrically isolated?

The device features internal isolation with an RMS isolation voltage rating of 2500 V.

What is the critical rate of rise of off-state voltage?

The critical rate of rise of off-state voltage (dV/dt) is a minimum of 1500 V/µs at a junction temperature of 125°C.