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BU25H08-E3/A is listed in the Bridge Rectifier range at ChipApex. The manufacturer field lists Vishay General Semiconductor - Diodes Division. Its product description is BRIDGE RECT 1PHASE 600V 3.5A BU. Review the specifications below when checking this part for your BOM.
The BU25H08-E3/A is a single-phase bridge rectifier from Vishay General Semiconductor, utilizing isoCink+ technology. It features a maximum repetitive peak reverse voltage of 800 V and an average forward current rating of 25 A at a case temperature of 60 °C. The device operates within a junction temperature range of -55 to +175 °C. Electrical characteristics include a typical forward voltage of 0.97 V at 12.5 A and a maximum reverse current of 5 μA at rated voltage. The component is housed in a BU-4 through-hole package with solder pin termination.
Verify the specific ordering suffix against official documentation to confirm compliance status. The base part number indicates industrial grade classification. Confirm RoHS compliance details directly from the manufacturer's datasheet or product specification sheet before finalizing procurement orders.
Select this component based on the required 800 V reverse voltage rating and 25 A average current capacity. Ensure the application allows for adequate heatsinking to maintain case temperatures within limits for full current derating. Verify that the BU-4 package dimensions fit the target PCB layout constraints.
This component belongs to the BU25H06 and BU25H08 series of Enhanced isoCink+ Bridge Rectifiers manufactured by Vishay General Semiconductor. The series shares identical mechanical and thermal characteristics, differing primarily in their maximum repetitive peak reverse voltage ratings.
BU25H06-E3/A serves as a lower voltage variant within the same series. Cross-referencing requires verifying that the system voltage does not exceed the replacement's 600 V rating while maintaining compatibility with the BU-4 package and electrical parameters.
The maximum non-repetitive peak forward surge current (IFSM) is 300 A for a single 8.3 ms sine-wave pulse.
Polarity is marked on the body of the component, with the positive lead identified by a beveled corner.
The typical junction capacitance per diode is 125 pF, measured at 4.0 V and 1 MHz.
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