BUJ100,412

Single Bipolar Transistors Overview

The BUJ100,412 is a single NPN silicon power transistor manufactured by WeEn Semiconductors. It is housed in a TO-92 package and designed for through-hole mounting. The device supports a maximum collector current of 1 A and offers a collector-emitter breakdown voltage (VCEO) of 400 V. Additional electrical characteristics include a collector-base voltage (VCBO) of 700 V, a collector-emitter saturation voltage of 240 mV, and a maximum power dissipation of 2 W. The component operates at temperatures up to +150 °C with a DC current gain (hFE) ranging from a minimum of 9 to a maximum of 31.

Single Bipolar Transistors Feature Summary

• High voltage capability with 400 V collector-emitter breakdown rating
• Robust thermal performance supporting operation up to +150 °C
• Low saturation voltage for efficient switching applications

Single Bipolar Transistors Applications

• High-voltage switching circuits
• Power supply designs requiring robust NPN transistors
• Industrial control systems

Single Bipolar Transistors Procurement Notes

Verify the manufacturer designation carefully, as this component has been produced under both NXP Semiconductors and WeEn Semiconductors branding due to corporate restructuring. Confirm that the specific part number suffix matches the required datasheet revision and compliance standards before finalizing procurement orders to ensure compatibility with existing design specifications.

Single Bipolar Transistors Selection Notes

Select this component when a high-voltage NPN transistor with moderate current handling is required in a compact through-hole package. The 400 V rating distinguishes it from standard low-voltage logic transistors. Ensure the application circuit accounts for the 2 W power dissipation limit and the specific hFE range to guarantee stable biasing and switching performance under varying load conditions.

Single Bipolar Transistors Part Context

This component belongs to the family of discrete bipolar junction transistors (BJTs) intended for general-purpose power switching. It utilizes silicon technology and is packaged in the standard TO-92 form factor, which facilitates easy integration into printed circuit boards using through-hole assembly techniques. The device serves as a fundamental building block for analog and digital switching applications requiring reliable high-voltage isolation.

Single Bipolar Transistors Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation.