CAT22C10LI20

Memory IC Overview

The CAT22C10LI20 is a 256-bit Non-Volatile Static RAM (NVSRAM) manufactured by onsemi, organized as 64 words by 4 bits. It integrates a high-speed CMOS SRAM array with an electrically erasable programmable read-only memory (EEPROM) backup system to ensure data retention without power. The device operates within a supply voltage range of 4.5 V to 5.5 V and features a maximum access time of 200 ns. It is housed in an 18-lead DIP package suitable for through-hole mounting. The component supports commercial, industrial, and automotive temperature ranges, functioning between -40°C and +85°C.

Memory IC Feature Summary

• Integrates fast static RAM with non-volatile EEPROM backup for seamless data preservation during power loss
• Supports infinite recall cycles allowing unlimited transfers between the volatile RAM and non-volatile storage arrays
• Provides hardware-based power-up and power-down protection to prevent data corruption during voltage transitions

Memory IC Applications

• Industrial control systems requiring persistent configuration data storage
• Automotive electronics needing reliable parameter retention under varying thermal conditions
• Embedded systems utilizing parallel interface memory for low-latency data logging

Memory IC Procurement Notes

Verify the specific suffix 'LI20' against current manufacturer documentation to confirm pinout compatibility and package dimensions, as legacy variants may differ. Confirm RoHS compliance status and lead content requirements for your assembly process. Check for end-of-life notices or obsolescence warnings from onsemi before finalizing design-in decisions. Ensure voltage levels match the 4.5V to 5.5V operational range specified in the official datasheet.

Memory IC Selection Notes

Select this component when a small, fast, parallel-access memory is required that must retain data indefinitely without battery support. It is suitable for applications where infinite write endurance to the non-volatile section is necessary compared to standard EEPROMs. Consider the 18-lead DIP package constraints for PCB layout if through-hole technology is mandated. Evaluate the 200 ns access speed against system timing requirements to ensure adequate performance margins.

Memory IC Part Context

This part belongs to the CAT22C10 family of 256-bit NVSRAM devices from onsemi. The family offers variations in package types, including SOIC and DIP configurations, and different access speeds such as 300 ns options. These components are designed to replace batteries in many applications, offering a solid-state solution for maintaining critical data in microcontroller-based systems.

Memory IC Replacement Considerations

CAT22C10WI-20-T1: Same capacity and speed but in SOIC-16 surface mount package. CAT22C10JI-20TE7: Same capacity and speed but in SOIC-16 package; verify lead-free status.