CY14B104LA-ZS25XI

Memory IC Overview

The CY14B104LA-ZS25XI is a non-volatile SRAM (nvSRAM) integrated circuit manufactured by Infineon Technologies. It provides a storage capacity of 4 Mbit, organized as 512K x 8 bits. The device features a parallel interface with an access time of 25 ns. It operates within a supply voltage range of 2.7 V to 3.6 V and supports an industrial temperature range from -40 °C to +85 °C. The component is housed in a 44-pin TSOP-II package.

Memory IC Feature Summary

• Combines the speed of static RAM with non-volatile data retention capabilities.

Memory IC Applications

• Industrial control systems requiring persistent memory
• Data logging applications needing fast write speeds
• Embedded systems with power loss protection requirements

Memory IC Procurement Notes

Verify the specific suffix 'LA' against official Infineon documentation to confirm package type and material composition. Ensure compatibility with system voltage levels between 2.7 V and 3.6 V. Confirm lead-free status and RoHS compliance through current datasheets before procurement.

Memory IC Selection Notes

Select this component for designs requiring rapid data persistence without battery backup. Compare access times and organization against alternative nvSRAMs. Verify thermal performance within the specified industrial temperature range. Check pinout compatibility with existing PCB layouts using the 44-TSOP II footprint.

Memory IC Part Context

This part belongs to the CY14B104 family of nvSRAM devices. It shares architectural similarities with other members like the CY14B104K and CY14B104L series. These devices are designed to replace volatile SRAM or EEPROM solutions where high-speed writes and unlimited endurance are critical.

Memory IC Replacement Considerations

Consult official Infineon substitution guides for direct replacements. Verify electrical parameters such as voltage ranges and access times match the original design requirements. Check package dimensions for mechanical compatibility.