CY7C1009B-12VC

Memory IC Overview

The CY7C1009B-12VC is a 1-Mbit (128K x 8) high-speed CMOS static RAM manufactured by Infineon Technologies. It features a parallel interface with a maximum access time of 12 ns and operates within a supply voltage range of 4.5 V to 5.5 V. The component supports commercial ambient temperature operation from 0°C to +70°C. It utilizes a 32-pin, 300-mil-wide molded SOJ package.

Memory IC Feature Summary

• Provides high-speed data access with a 12 ns maximum address-to-data valid time.
• Features low active power consumption and automatic power-down when deselected.
• Supports easy memory expansion through dedicated Chip Enable and Output Enable options.
• Includes TTL-compatible inputs and outputs for direct logic interfacing.

Memory IC Applications

• High-performance computing systems requiring fast random access memory
• Industrial control applications utilizing standard 5V logic levels
• Embedded systems needing compact surface-mount SRAM solutions

Memory IC Procurement Notes

Verify the specific ordering suffix 'VC' confirms the 300-mil SOJ package and commercial temperature grade. Confirm RoHS compliance status as older Cypress documentation may list lead-based variants. Ensure the source document matches the current manufacturer specifications before finalizing procurement orders.

Memory IC Selection Notes

Select this part for designs requiring 12 ns access speed in a 32-pin SOJ footprint. Compare against the CY7C1009B-15VC if slower speeds are acceptable for lower power. Verify that the system voltage remains strictly within the 4.5 V to 5.5 V range to ensure reliable operation.

Memory IC Part Context

This component belongs to the CY7C1009B series of 1-Mbit Static RAM devices. It shares functional equivalence with the CY7C109B series, differing primarily in physical package dimensions. The device represents a legacy CMOS SRAM technology designed for general-purpose high-speed buffering and storage.

Memory IC Replacement Considerations

CY7C1009B-15VC: Offers identical functionality with a 15 ns access time in the same package.

Memory IC FAQ

How is the write operation initiated on the CY7C1009B-12VC?

Writing is accomplished by taking Chip Enable One (CE1) and Write Enable (WE) inputs LOW while forcing Chip Enable Two (CE2) HIGH.

What is the data retention capability of this SRAM?

The datasheet specifies a 2.0V data retention characteristic specifically for the Low Power (L) version of the device family.