Memory IC CY7C1268KV18-400BZC product image

CY7C1268KV18-400BZC

  • Description:IC SRAM 36MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:eb34e3d13143 Category: Brand:

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CY7C1268KV18-400BZC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 36MBIT PARALLEL 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1268KV18-400BZC

  • Description:IC SRAM 36MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, DDR II+
  • Memory Size:36Mbit
  • Memory Organization:2M x 18
  • Memory Interface:Parallel
  • Clock Frequency:400 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)
  • Access Time:-

Memory IC datasheet and documents for CY7C1268KV18-400BZC

CY7C1268KV18-400BZC

Memory IC Overview

The CY7C1268KV18-400BZC is a 36-Mbit synchronous pipelined SRAM featuring DDR II+ architecture. It offers a two-word burst capability with a 2.5-cycle read latency when the DOFF pin is asserted HIGH. The device supports a maximum operating frequency of 400 MHz, enabling data transfer rates up to 1100 MHz via double data rate interfaces. It utilizes a 165-ball FBGA package and operates within a core voltage range of 1.7 V to 1.9 V.

Memory IC Feature Summary

  • Supports high-bandwidth operations through a two-word burst architecture and double data rate interface.
  • Provides echo clocks (CQ/CQ) and a valid data indicator (QVLD) to simplify data capture in high-speed systems.
  • Features programmable output impedance via the ZQ pin for accurate system bus matching.
  • Includes an integrated phase-locked loop (PLL) for precise data placement and timing.

Memory IC Applications

  • High-performance networking equipment requiring low-latency memory access
  • Telecommunications infrastructure utilizing parallel processing
  • Industrial control systems demanding reliable synchronous data storage

Memory IC Procurement Notes

Verify the specific suffix 'BZC' against official Infineon documentation to confirm lead-free status and RoHS compliance details. Ensure the selected variant matches the required commercial temperature range and package dimensions. Cross-reference ordering codes with current datasheets to avoid obsolete part numbers.

Memory IC Selection Notes

Select this component for designs requiring 36-Mbit density with a 18-bit data width. Consider the 2.5-cycle read latency for pipeline optimization. Evaluate the need for PLL functionality versus direct clocking based on system jitter requirements. Confirm compatibility with HSTL I/O standards and available echo clock routing.

Memory IC Part Context

This part belongs to the Cypress/Infineon DDR II+ SRAM family, designed for high-speed applications. It shares architectural similarities with QDR II+ devices but utilizes a double data rate interface. The CY7C1268KV18 specifically targets systems needing wide data buses and high throughput within a compact FBGA footprint.

Memory IC Replacement Considerations

Check for CY7C1268KV18-400BZXI or other suffix variations for different temperature grades or packaging options. Verify functional equivalence with CY7C1270KV18 if a 36-bit data width is acceptable instead of 18-bit.

Memory IC FAQ

How does the DOFF pin affect read latency?

When DOFF is asserted HIGH, the device operates with a 2.5-cycle read latency. When DOFF is LOW, it behaves like a DDR I device with a 1-cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for output impedance matching. An external resistor connected between ZQ and ground tunes the output drivers to match the system data bus impedance.

CY7C1268KV18-400BZCCY7C1268KV18-400BZC

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