CY7C1354B-166BGC

Memory IC Overview

The CY7C1354B-166BGC is a 9-Mb (256K x 36) synchronous pipelined burst SRAM featuring NoBL architecture. It supports 166 MHz bus operations with zero wait states and offers a maximum access time of 3.5 ns. The device utilizes a single 3.3V power supply with separate VDDQ for I/O, includes byte write capability, and is housed in a 119-ball BGA package.

Memory IC Feature Summary

• Supports unlimited true back-to-back Read/Write operations with no wait states
• Features internally self-timed output buffer control to eliminate asynchronous OE usage
• Includes Byte Write capability for selective data updates
• Incorporates IEEE 1149.1 JTAG Boundary Scan functionality

Memory IC Applications

• High-performance networking equipment
• Telecommunications systems
• Industrial automation controllers
• Test and measurement instruments

Memory IC Procurement Notes

Verify the specific suffix 'BGC' against official Infineon documentation to confirm the 119-ball BGA package and lead-free status. Confirm RoHS compliance and end-of-life status through authorized distributors or manufacturer notices before procurement planning.

Memory IC Selection Notes

Select this component for designs requiring high throughput with minimal latency during read/write transitions. Ensure the system supports 3.3V logic levels and accommodates the 119-ball BGA footprint. Verify that the 166 MHz speed grade meets the timing requirements of the target application.

Memory IC Part Context

This part belongs to the CY7C1354B/CY7C1356B family of NoBL SRAMs originally manufactured by Cypress Semiconductor, now part of Infineon Technologies. The family is designed to replace ZBT devices while offering improved performance through pipelined architecture and zero wait state capabilities.

Memory IC Replacement Considerations

CY7C1354C-166BGC