Memory IC CY7C14251KV18-250BZI product image

CY7C14251KV18-250BZI

  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:007264b29351 Category: Brand:

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CY7C14251KV18-250BZI is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 36MBIT PAR 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C14251KV18-250BZI

  • Description:IC SRAM 36MBIT PAR 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:36Mbit
  • Memory Organization:4M x 9
  • Memory Interface:Parallel
  • Clock Frequency:250 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (13x15)

Memory IC datasheet and documents for CY7C14251KV18-250BZI

CY7C14251KV18-250BZI

Memory IC Overview

The CY7C14251KV18-250BZI is a 36-Mbit QDR II SRAM with a 4M x 9 organization. It supports a maximum clock frequency of 250 MHz and operates within a voltage range of 1.7 V to 1.9 V for the core supply. The device features separate independent read and write data ports, enabling concurrent transactions without bus turnaround delays. It utilizes double data rate interfaces on both ports, transferring data at 666 MHz relative to the 333 MHz internal clock. The component is housed in a 165-ball FBGA package.

Memory IC Feature Summary

  • Supports concurrent read and write operations through separate dedicated data ports
  • Features double data rate interfaces on both read and write ports for high bandwidth
  • Includes echo clocks (CQ and CQ) to simplify data capture in high-speed systems
  • Provides programmable output impedance via an external resistor connected to the ZQ pin

Memory IC Applications

  • High-performance networking equipment requiring low-latency memory access
  • Telecommunications infrastructure utilizing synchronous pipelined SRAM
  • Industrial control systems demanding full data coherency during concurrent transactions

Memory IC Procurement Notes

Verify the specific suffix BZI against official Infineon documentation to confirm lead-free status and industrial temperature rating. Confirm that the 250 MHz speed grade matches system timing requirements. Ensure compatibility with the 165-ball FBGA footprint and verify power supply constraints for both core and I/O voltages prior to integration.

Memory IC Selection Notes

Select this component when a 4M x 9 organization is required alongside QDR II architecture benefits. Consider the 250 MHz speed grade if system latency targets are met by the specified access times. Evaluate the need for separate port selects if depth expansion beyond single-device capacity is planned for the design.

Memory IC Part Context

This part belongs to the Cypress/Infineon QDR II SRAM family, which includes variants such as the CY7C14101KV18, CY7C14121KV18, and CY7C14141KV18. These devices share common architectural features like dual-port independence and echo clock generation but differ in bit-width configurations ranging from x8 to x36. The CY7C14251KV18 specifically addresses applications needing 9-bit word widths.

Memory IC FAQ

How does the DOFF pin affect the device operation?

When DOFF is asserted HIGH, the device operates with a 1.5-cycle read latency using the PLL. When DOFF is LOW, the PLL is disabled, and the device behaves in QDR I mode with a 1-cycle read latency.

What is the function of the ZQ pin?

The ZQ pin is used for output impedance matching. An external resistor connects ZQ to ground to tune the output drivers to the system data bus impedance, typically set to 0.2 times the line impedance.

CY7C14251KV18-250BZICY7C14251KV18-250BZI

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