Memory IC CY7C1543V18-333BZC product image

CY7C1543V18-333BZC

$139.94
  • Description:IC SRAM 72MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray

SKU:29d9e45a08b0 Category: Brand:

  
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CY7C1543V18-333BZC is listed in the Memory IC range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is IC SRAM 72MBIT PARALLEL 165FBGA. Review the specifications below when checking this part for your BOM.

Memory IC specifications for CY7C1543V18-333BZC

  • Description:IC SRAM 72MBIT PARALLEL 165FBGA
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, QDR II
  • Memory Size:72Mbit
  • Memory Organization:4M x 18
  • Memory Interface:Parallel
  • Clock Frequency:333 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:1.7V ~ 1.9V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-LBGA
  • Supplier Device Package:165-FBGA (15x17)
  • Access Time:-

Memory IC datasheet and documents for CY7C1543V18-333BZC

CY7C1543V18-333BZC

Memory IC Overview

The CY7C1543V18-333BZC is a 72-Mbit QDR-II+ synchronous pipelined burst SRAM with a 4M x 18 organization. It operates at a maximum clock frequency of 333 MHz, supporting data transfer rates up to 666 MHz via double data rate interfaces on both read and write ports. The device features separate independent read and write data ports, enabling concurrent transactions without bus turnaround. It utilizes a single multiplexed address input bus for both ports and includes echo clocks (CQ, CQ) and a valid output indicator (QVLD) to simplify high-speed system design.

Memory IC Feature Summary

  • Separate independent read and write data ports eliminate the need for data bus turnaround
  • Supports concurrent read and write transactions through dedicated port selects
  • Echo clocks and valid output indicator simplify data capture in high-speed systems
  • Synchronous internally self-timed writes with byte write select capabilities

Memory IC Applications

  • High-performance networking equipment requiring low latency memory access
  • Telecommunications infrastructure utilizing QDR architecture
  • Industrial control systems needing fast synchronous SRAM solutions
  • Test and measurement instruments demanding high bandwidth data handling

Memory IC Procurement Notes

Verify the specific suffix BZC against official Infineon documentation to confirm package type and lead-free status. Ensure compatibility with existing board layouts regarding the 165-ball FBGA footprint. Confirm that the 333 MHz speed grade matches the system clock requirements. Check for any RoHS compliance variations between manufacturing lots or regions.

Memory IC Selection Notes

Select this component when a 72-Mbit capacity with 18-bit data width is required. The QDR-II+ architecture is suitable for applications needing simultaneous read and write operations. Consider the 333 MHz speed grade if lower power consumption is preferred over the 375 MHz variant. Ensure the system supports the necessary voltage levels for VDD and VDDQ operation.

Memory IC Part Context

This part belongs to the Cypress/Infineon QDR-II+ SRAM family, designed for high-throughput applications. It shares architectural similarities with other members like the CY7C1541V18 and CY7C1545V18 but differs in density and data width. The QDR-II+ technology improves upon QDR-II by offering higher speeds and improved timing margins.

Memory IC Replacement Considerations

Direct replacements within the same family include the CY7C1543V18-375BZC for higher speed or CY7C1543V18-300BZC for lower power. Verify pinout compatibility and electrical specifications before substitution.

CY7C1543V18-333BZCCY7C1543V18-333BZC
$139.94
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